Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. L. Lovejoy"'
Autor:
M. L. Lovejoy, Stephen J. Pearton, J. D. MacKenzie, Kenneth A. Jones, Fan Ren, Catherine Vartuli, S. M. Donovan, John C. Zolper, Randy J. Shul, Albert G. Baca, C. R. Abernathy, M. Hagerott-Crawford
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:802-806
W, WSi0.44, and Ti/Al contacts were examined on n+In0.65Ga0.35N, InN, and In0.75Al0.25N. W was found to produce low specific contact resistance (ǫc∼10−7 Ω cm2) ohmic contacts to InGaN, while WSix showed an as-deposited ǫc of 4×10−7 Ω cm2 b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40c69ca1e1aa6e3dcd72a8dbabb75e7
https://doi.org/10.1116/1.580711
https://doi.org/10.1116/1.580711
Autor:
Steve Pearton, J. D. MacKenzie, Albert G. Baca, A Jones, John C. Zolper, Catherine Vartuli, M. L. Lovejoy, C. R. Abernathy, Fan Ren, M. Hagerott-Crawford, Randy J. Shul
Publikováno v:
Scopus-Elsevier
The temperature dependence of the specific contact resistance of W and WSi 0.44 contacts on n + In 0.65 Ga 0.35 N and InN was measured in the range −50–125°C. The results were compared to theoretical values for different conduction mechanisms, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68515217d07a3e78bde211289a0fedd1
https://doi.org/10.1016/s0038-1101(96)00188-8
https://doi.org/10.1016/s0038-1101(96)00188-8
Autor:
D. J. Rieger, A.J. Howard, Antonio J. Ricco, L. R. Sloan, Robert R. Rye, M. A. Mitchell, M. L. Lovejoy
Publikováno v:
Journal of The Electrochemical Society. 141:3556-3561
By combining conventional integrated-circuit processing techniques with chemical etching for strong Cu film adhesion, three processes for the fabrication of the fine (< 20 [mu]m, a factor of five smaller than existing technology), adherent conducting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eefecf5dd2262d3b4d197caaff29f759
https://doi.org/10.1149/1.2059369
https://doi.org/10.1149/1.2059369
Autor:
Fan Ren, M. L. Lovejoy, Catherine Vartuli, John C. Zolper, M. Hagerott-Crawford, Albert G. Baca, Stephen J. Pearton, Randy J. Shul, Kenneth A. Jones, J. D. MacKenzie, C. R. Abernathy
Publikováno v:
MRS Proceedings. 468
The temperature dependence of the specific contact resistance of W and WSi0.44 contacts on n+ In0.55Ga0.35N and InN was measured in the range -50 °C to 125 °C. The results were compared to theoretical values for different conduction mechanisms, to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::decddbc81841c10e1300d44bd8336081
https://doi.org/10.1557/proc-468-413
https://doi.org/10.1557/proc-468-413
Publikováno v:
MRS Proceedings. 316
The growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8bb44b6ce3672dbc3998aa54e7d074e
https://doi.org/10.1557/proc-316-899
https://doi.org/10.1557/proc-316-899
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:657
High rate etching of through-substrate via holes are essential to many GaAs electronic and photonic device applications. The backside via holes are relevant to monolithic microwave integrated circuits for low inductance grounding and increased circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11dcd139206abc8c87a40bbb62c4cd6e
https://doi.org/10.1116/1.589365
https://doi.org/10.1116/1.589365
Autor:
J. D. MacKenzie, C. R. Abernathy, M. L. Lovejoy, John C. Zolper, Randy J. Shul, Catherine Vartuli, M. Hagerott-Crawford, Albert G. Baca, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:3520
W, WSi0.44, and Ti/Al contact properties were examined on n+In0.65Ga0.35N, InN, and In0.75Al0.25N. W was found to produce low specific contact resistance (dc∼10−7 Ω cm2) ohmic contacts to InGaN, with significant reaction between metal and semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b82598aa7b00c4bdb73a4de420ff62fb
https://doi.org/10.1116/1.588791
https://doi.org/10.1116/1.588791
Autor:
M. L. Lovejoy, J. F. Klem
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:702
We report the molecular‐beam epitaxial growth and characterization of p‐type modulation‐doped AlGaAsSb/InGaSb quantum wells. Growth of AlGaAsSb with good compositional control was demonstrated with AlGaAs fractions up to 0.2. Characteristics of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ba66417bdaa2ba37be199dada1d5d7
https://doi.org/10.1116/1.588140
https://doi.org/10.1116/1.588140
Autor:
M. L. Lovejoy, D. L. Hetherington, D. J. Rieger, Michael R. Melloch, Randy J. Shul, John F. Klem
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:27
Plasma‐induced etch damage often degrades the electrical and optical performance of III–V high‐density integrated circuits and photonic devices. We have investigated the etch‐induced damage of electron cyclotron resonance (ECR) generated plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866b741c8d804e822ec504acca1a2fd8
https://doi.org/10.1116/1.587980
https://doi.org/10.1116/1.587980