Zobrazeno 1 - 10
of 11
pro vyhledávání: '"M. L. Hussein"'
Publikováno v:
MEJ. Mansoura Engineering Journal. 31:1-13
Publikováno v:
Journal of Physics: Conference Series. 1484:012003
This study investigates the effect of radiation doses of 4.78MeV energy of alpha particles emitted from radium radioactive source (Ra226), which gives an equivalent dose rate of (5mrem/h) with an activity of (60KBq ), on the optical properties of 350
Publikováno v:
INTERNATIONAL JOURNAL OF COMPUTERS & TECHNOLOGY. 14:5742-5758
This paper deals with a multi-objective linear programming problem with an inexact rough interval fuzzy coefficients IRFMOLP. This problem is considered by incorporating an inexact rough interval fuzzy number in both the objective function and constr
Autor:
V. P. Kladko, Gregory J. Salamo, M. V. Slobodian, M. L. Hussein, Yu. I. Mazur, Euclydes Marega, V. V. Strelchuk, Petr M. Lytvyn
Publikováno v:
physica status solidi (a). 206:1748-1751
Molecular beam epitaxy (MBE) grown In 0.5 Ga 0.5 As/GaAs multilayer structures with quantum dots chains (QDs), obtained under different growth conditions, were investigated by high-resolution X-ray diffractometry (HRXRD) and AFM. It was determined th
Autor:
Wenquan Ma, Qiaoying Zhou, Gregory J. Salamo, M. L. Hussein, Jiayu Chen, B. Pattada, M. O. Manasreh
Publikováno v:
Applied Physics Letters. 82:2509-2511
Fourier-transform infrared spectroscopy technique was employed to investigate the optical absorption coefficient of intersubband transitions in Si-doped In0.3Ga0.7As/GaAs multiple quantum dot structures. Waveguides with 45° polished facets were fabr
Autor:
V. V. Strelchuk, M. V. Slobodian, V. P. Kladko, Vitaliy G. Dorogan, P.M. Lytvyn, Yu. I. Mazur, Euclydes Marega, Morgan E. Ware, Gregory J. Salamo, M. L. Hussein
Publikováno v:
Nanotechnology. 19(50)
Lateral ordering of InGaAs quantum dots on the GaAs (001) surface has been achieved in earlier reports, resembling an anisotropic pattern. In this work, we present a method of breaking the anisotropy of ordered quantum dots (QDs) by changing the grow
Publikováno v:
AIP Conference Proceedings.
Lateral and vertical ordering of InGaAs quantum dots over GaAs 〈001〉 has been achieved in earlier reports resembling an anisotropic lateral pattern. We present in this letter a method of breaking the anisotropy of such structures by changing the
Publikováno v:
Scopus-Elsevier
Lateral ordering of InGaAs quantum dots over GaAs (001) has been achieved in earlier reports resembling anisotropic pattern. We present in this letter a method of breaking the anisotropy of ordered QDs by changing the growth environment. We do show e
Autor:
Gregory J. Salamo, M. L. Hussein, Tetsuya D. Mishima, J. L. Shultz, Wenquan Ma, Matthew B. Johnson
Publikováno v:
Physical Review B. 69
Publikováno v:
MRS Proceedings. 776
Multiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under no