Zobrazeno 1 - 10
of 467
pro vyhledávání: '"M. L. Caldwell"'
Autor:
Vehreschild, T.
Publikováno v:
Psychiatrie, Neurologie und medizinische Psychologie, 1990 Mar 01. 42(3), 178-178.
Externí odkaz:
https://www.jstor.org/stable/45258101
Autor:
Desbureaux, Sébastien1 (AUTHOR) sebastien.desbureaux@inrae.fr, Girard, Julia1 (AUTHOR), Dalongeville, Alicia2,3 (AUTHOR), Devillers, Rodolphe4 (AUTHOR), Mouillot, David2,5 (AUTHOR), Jiddawi, Narriman6,7 (AUTHOR), Sanchez, Loic2,8 (AUTHOR), Velez, Laure2 (AUTHOR), Mathon, Laetitia8 (AUTHOR), Leblois, Antoine1 (AUTHOR)
Publikováno v:
Conservation Letters. Nov2024, Vol. 17 Issue 6, p1-11. 11p.
Autor:
M. L. Caldwell, R. L. Taylor
Publikováno v:
Journal of Intellectual Disability Research. 27:45-49
The results have important heuristic value for several reasons. First, they indicate that contrary to popular belief, individuals with Prader-Willi syndrome do indicate a definite and, in fact, consistent food preference. Further, the degree of food
Autor:
M. L. Caldwell
Publikováno v:
Journal of Consumer Culture. 4:5-26
This article is an ethnographic study of how Russian consumers have ‘domesticated’ McDonald’s. Specifically, I am concerned with how Russians blur the boundaries between the personal and the public, the local and the foreign, by simultaneously
Autor:
Martin E. Kordesch, V. I. Dimitrova, Hugh H. Richardson, M. L. Caldwell, P. G. Van Patten, A. L. Martin, C. M. Spalding
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1894-1897
Luminescence studies of amorphous AlN incorporated with pure Cu, Mn, or Cr and codeposited with (Cu, Tb, Mn) were performed at 300 K. Thin films of Cu, Mn, and Cr amorphous AlN, ∼200 nm thick, were grown on p-Si(111) substrates using rf magnetron s
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:159-166
An aluminum nitride (AlN) film deposited on silicon (100) was used as the substrate for growing manganese (Mn) doped AlN film by metal organic chemical vapor deposition (MOVCD). The (15.78 [.proportional]m) under layer of AlN was grown at 615°C at a
Autor:
M. L. Caldwell, Martin E. Kordesch, Hugh H. Richardson, V. I. Dimitrova, P. G. Van Patten, A. L. Martin
Publikováno v:
Applied Physics Letters. 78:1246-1248
Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10−4 Torr. Film thickness was typically 200 nm. After growth, the films were “activated” at
Autor:
M L, CALDWELL, R M, CHESTER
Publikováno v:
The Journal of biological chemistry. 161
Autor:
G W, VOLZ, M L, CALDWELL
Publikováno v:
The Journal of biological chemistry. 171(2)
Autor:
Eriberto P Lozada, M. L. Caldwell
Publikováno v:
The Blackwell Companion to Globalization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575dd9de65ed8685e81205aac5d1b214
https://doi.org/10.1002/9780470691939.ch26
https://doi.org/10.1002/9780470691939.ch26