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Autor:
M. M. Mandoc, M.C.M. van de Sanden, M. L. C. Adams, G Gijs Dingemans, Wilhelmus M. M. Kessels, N.M. Terlinden
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Aluminum oxide films (Al 2 O 3 ) synthesized by atomic layer deposition (ALD) provide an excellent level of surface passivation of n−, p−, and heavily doped p-type crystalline silicon (c-Si). It has been shown that a negative fixed charge density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9adf191e07690367d530ca2557282e16
https://doi.org/10.1109/pvsc.2010.5616794
https://doi.org/10.1109/pvsc.2010.5616794
