Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. L. C. Adams"'
Autor:
M. M. Mandoc, M.C.M. van de Sanden, M. L. C. Adams, G Gijs Dingemans, Wilhelmus M. M. Kessels, N.M. Terlinden
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Aluminum oxide films (Al 2 O 3 ) synthesized by atomic layer deposition (ALD) provide an excellent level of surface passivation of n−, p−, and heavily doped p-type crystalline silicon (c-Si). It has been shown that a negative fixed charge density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9adf191e07690367d530ca2557282e16
https://doi.org/10.1109/pvsc.2010.5616794
https://doi.org/10.1109/pvsc.2010.5616794
Autor:
Berghuis, Wilhelmus J. H., Helmes, Max, Melskens, Jimmy, Theeuwes, Roel J., Kessels, Wilhelmus M. M., Macco, Bart
Publikováno v:
Journal of Applied Physics; 5/21/2022, Vol. 131 Issue 19, p1-15, 15p
Autor:
Berghuis, Wilhelmus J. H., Melskens, Jimmy, Macco, Bart, Theeuwes, Roel J., Black, Lachlan E., Verheijen, Marcel A., Kessels, Wilhelmus M. M.
Publikováno v:
Journal of Applied Physics; 10/7/2021, Vol. 130 Issue 13, p1-10, 10p
Autor:
Berghuis, Wilhelmus J. H., Melskens, Jimmy, Macco, Bart, Theeuwes, Roel J., Verheijen, Marcel A., Kessels, Wilhelmus M. M.
Publikováno v:
Journal of Materials Research; Feb2021, Vol. 36 Issue 3, p571-581, 11p