Zobrazeno 1 - 10 of 71 pro vyhledávání: '"M. Lünenbürger"'
1
Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors
Autor: Markus Weyers, J.-T. Zettler, M. Lünenbürger, Michael Heuken, T. Bergunde, B. Henninger
Publikováno v: Journal of Crystal Growth. 248:235-239
A procedure and set-up for high-precision determination of the true surface temperature of wafers during growth by metalorganic vapour phase epitaxy is described. The reflectance of the surface measured by an EpiRAS R sensor is used for correcting th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::827b260cc9162974ebfabc50285551ab
https://doi.org/10.1016/s0022-0248(02)01856-0
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2
Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures
Autor: Michael Heuken, O. Schön, V. N. Pavlovskii, A. L. Gurskii, Vitaly Z. Zubialevich, Rolf H. Jansen, V. A. Hryshanau, Y. Dikme, Harry Protzmann, A. S. Shulenkov, A.I. Stognij, E. V. Lutsenko, M. Lünenbürger, Bernd Schineller, G. P. Yablonskii
Publikováno v: physica status solidi (c). :272-275
The electroluminescence properties of InGaN/GaN electroluminescence test heterostructures grown on sapphire and silicon substrates in the temperature interval of 300–380 K were investigated as a function of current at DC and pulsed excitation. A co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::465df06c7f84243786de9d72a9ff5af7
https://doi.org/10.1002/pssc.200390041
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3
Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450-470 nm
Autor: Bernd Schineller, Michael Heuken, O. Schön, G. P. Yablonskii, Evgenii V. Lutsenko, V. N. Pavlovskii, M. Lünenbürger, Harry Protzmann, A. L. Gurskii, I.P. Marko, Vitaly Z. Zubialevich
Publikováno v: physica status solidi (a). 188:79-82
Lasing under optical pumping by N 2 -laser radiation in InGaN/GaN multiple quantum well heterostructures grown in AIXTRON MOVPE reactors was achieved and investigated in the wavelength range of 450-470 nm. The laser operation wavelength depends most
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::128716ded180c960c4c2e91f44aef7fb
https://doi.org/10.1002/1521-396x(200111)188:1<79::aid-pssa79>3.0.co
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5
High-Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures
Autor: M. Lünenbürger, G. P. Yablonskii, Harry Protzmann, B. Schneller, E. V. Lutsenko, O. Schön, Michael Heuken, K. Heime, V. N. Pavlovskii, I.P. Marko
Publikováno v: physica status solidi (b). 216:491-494
Lasing, stimulated emission and photoluminescence in InGaN/GaN multiquantum well (MQW) heterostructures were investigated in a wide temperature interval from the liquid nitrogen temperature up to 600 K. Laser action was achieved up to T = 585 K in a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21b9636525deb44a947dfc408b74d6ac
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<491::aid-pssb491>3.0.co
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8
Influence of UV Light-Assisted Annealing on Optical Properties of InGaN/GaN Heterostructures Grown by MOVPE
Autor: K. Heime, I.P. Marko, Harry Protzmann, Bernd Schineller, E. V. Lutsenko, M. Lünenbürger, G. P. Yablonskii, O. Schön, V. N. Pavlovskii, Michael Heuken
Publikováno v: physica status solidi (b). 216:175-179
The influence of ultraviolet light-assisted annealing on the optical properties of InGaN/GaN single quantum wells (SQW), and thick single and double heterostructures (SH, DH) was investigated. It was shown that annealing promotes an increase of the p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e9f5317b33333ade0a9fe7f7795f3ac
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<175::aid-pssb175>3.0.co
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9
Structural and Optical Analysis of (In, Ga)N Structures Grown by MOCVD
Autor: Michael Heuken, Juergen Christen, T. Riemann, D. Rudloff, H. Protzmann, Alois Krost, Jürgen Bläsing, M. Lünenbürger
Publikováno v: physica status solidi (b). 216:315-320
An X-ray and cathodoluminescence analysis of thick InGaN/GaN single layers and 10 × (InGaN/GaN) multiple quantum wells (MQWs) is presented. The layers were grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The strain state an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b292b45362dcb81ab3e3f4eb46967f24
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<315::aid-pssb315>3.0.co
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10
Optimized metalorganic vapour phase epitaxy of ZnMgSSe heterostructures
Autor: J. Xu, H. Hamadeh, Holger Kalisch, M. Lünenbürger, Michael Heuken
Publikováno v: Journal of Crystal Growth. :129-133
ZnMgSSe single layers and heterostructures have been grown on GaAs substrates in a low-pressure MOVPE system at 400 hPa and 330°C. Optimization of the growth process using the precursor combination of dimethylzinc(triethylamine adduct) (DMZn(TEN)),
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aec0438a29de172bd780d473f8cba5e8
https://doi.org/10.1016/s0022-0248(98)80308-4
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