Zobrazeno 1 - 10
of 41
pro vyhledávání: '"M. Kumarasamy Raja"'
Publikováno v:
IEEE Solid-State Circuits Letters. 5:118-121
Publikováno v:
2021 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (APS/URSI).
Publikováno v:
2021 IEEE Asia-Pacific Microwave Conference (APMC).
Publikováno v:
2020 IEEE Asia-Pacific Microwave Conference (APMC).
This work demonstrates a low power narrowband transceiver exhibiting extremely low sensitivity and large interference tolerance so that it can satisfy the IoT deployment demand with larger cell size and a large number of nodes. The circuit techniques
Publikováno v:
2020 IEEE Asia-Pacific Microwave Conference (APMC).
This paper presents a 19 to 20. 25GHz transformer based VCO with a 4X frequency multiplier that is used to generate 76 to 81GHz FMCW radar chirp signal in ADAS car applications. In order to distinguish between two closely spaced objects or a slowly m
Autor:
S. Mohamed Rabeek, M. Kumarasamy Raja
Publikováno v:
2020 IEEE Asia-Pacific Microwave Conference (APMC).
This paper demonstrates, an autonomous wireless sensor node without need for a battery, harvesting energy from dual source thermal and solar energy with detailed power budgeting and energy harvesting circuits. This sensor node operates from the scave
Publikováno v:
IECON
This paper presents an analog baseband block for a packaged 76-81 GHz transceiver chip implemented in 40 nm pure-CMOS for both long and short ranges frequency modulated continuous wave (FMCW) automotive radar. The transceiver consist of four-channels
Autor:
Guo-Qiang Lo, Surya Bhattacharya, Andy Eu-Jin Lim, Vishal Vinayak Kulkarni, Do-Won Kim, M. Kumarasamy Raja, Jason Liow Tsung Yang
Publikováno v:
Procedia Engineering. 216:144-151
100 Gbps (4 × 25 Gbps) optical receiver (Rx) module is demonstrated using Germanium (Ge) photodetector (PD) which is fabricated through Silicon-photonics process using 750 ohm-cm of high-resistivity silicon oxide insulator (SOI) wafer. Trans-impedan
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
This work describes a CMOS RF power detector with an extremely low temperature drift, less than ± 0.5 dB in a wide temperature range, from - 40°C to 125°C. The power detector is based on a biased diode detector with a load resistance, and it is im
Publikováno v:
A-SSCC
A narrowband low-power low-sensitivity, IoT TxRx compliant to ARIB STD-T-67 & T-30, is presented. It employs (1) an injection locked IQ-divider without power-hungry high speed logic gates and flip flops to generate 25% duty cycle LO that drives the m