Zobrazeno 1 - 10
of 80
pro vyhledávání: '"M. Kubovic"'
Publikováno v:
Diamond and Related Materials. 17:409-414
Boron delta-doped profiles with peak concentrations above the full activation limit have been grown on (100)-oriented single crystal diamond substrates by microwave assisted CVD using a solid doping source technique. The growth process was optimized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ba1583f8f6f0ee4aaf69e5dddce980
https://doi.org/10.1016/j.diamond.2007.12.030
https://doi.org/10.1016/j.diamond.2007.12.030
Publikováno v:
Diamond and Related Materials. 16:1033-1037
To obtain high blocking voltages and low forward losses in power diode structures, a Schottky contact can be merged with a MIS contact or a pn-junction. In this configuration, the Schottky contact is responsible for a low forward threshold voltage an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3df6499ada5fd08781a4b08fa5f0772
https://doi.org/10.1016/j.diamond.2006.12.060
https://doi.org/10.1016/j.diamond.2006.12.060
Publikováno v:
Semiconductor Science and Technology. 21:L32-L35
A diamond based heterostructure diode containing a p-type doped diamond active layer and an n-type doped ultra-nano-crystalline top layer has been investigated. Analysis suggests that the configuration is that of a merged diode, containing two areas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16b5f881617921e0919d4da94fd12fbe
https://doi.org/10.1088/0268-1242/21/4/l02
https://doi.org/10.1088/0268-1242/21/4/l02
Autor:
Andrej Denisenko, Tom Zimmermann, M. Kubovic, Erhard Kohn, F.J. Hernández Guillén, K. Janischowsky, Dieter M. Gruen
Publikováno v:
Diamond and Related Materials. 15:203-206
A rectifying nanocrystalline diamond (NCD) pn-structure has been grown by Hot-Filament CVD onto a large-area silicon substrate. N-type as well as p-type doping has been realized with this HFCVD process. IV-measurements at different temperatures show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877de0b358aeb4826cfa8c9e249baac5
https://doi.org/10.1016/j.diamond.2005.07.025
https://doi.org/10.1016/j.diamond.2005.07.025
Publikováno v:
Diamond and Related Materials. 14:514-517
Due to its unique properties, nanocrystalline diamond (NCD) can be considered for variety of applications in mechanics, biochemistry, etc. The combination of these applications with electronic devices would enable integrated in-situ signal processing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4224d2880262983bb21623248929004b
https://doi.org/10.1016/j.diamond.2004.12.021
https://doi.org/10.1016/j.diamond.2004.12.021
Autor:
Andrej Denisenko, M. Kubovic, K. Janischowsky, Erhard Kohn, Oliver A. Williams, Tom Zimmermann, Dieter M. Gruen
Publikováno v:
Diamond and Related Materials. 14:416-420
A new type of highly rectifying diamond heterostructure diode is demonstrated. The p-type doped part of the diode consists of a single crystal diamond, the n-type part of a nitrogen doped ultra-nano-crystalline diamond (UNCD) layer. IV-measurements s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff280026670c031f9c7f06cdb4f0f11
https://doi.org/10.1016/j.diamond.2004.12.049
https://doi.org/10.1016/j.diamond.2004.12.049
Autor:
Erhard Kohn, M. Kubovic, Makoto Kasu, D. Grobe, P. Schmid, S Ertl, Matthias Schreck, A. Aleksov, Bernd Stritzker
Publikováno v:
Diamond and Related Materials. 13:233-240
Advanced RF electronic systems contain active elements as well as passive components like wave guides, filters and switches, most of them realized in MEMS technologies. In this contribution the status of active devices on single crystal diamond, name
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4f2cd9890749217b571fda52ac519c0
https://doi.org/10.1016/j.diamond.2003.11.090
https://doi.org/10.1016/j.diamond.2003.11.090
Autor:
U. Spitzberg, Erhard Kohn, Matthias Schreck, N. Kaeb, Günther Dollinger, Andreas Bergmaier, A. Aleksov, M. Kubovic, Bernd Stritzker, Th. Bauer
Publikováno v:
Diamond and Related Materials. 12:391-398
Field effect transistors (FETs) in diamond should outperform FET structures on other wide bandgap materials like SiC and GaN in high power/high temperature applications due to the ideal diamond materials properties. However, the technology of these s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6ef4506aa0b1b9987cf02cacd053d01
https://doi.org/10.1016/s0925-9635(02)00401-6
https://doi.org/10.1016/s0925-9635(02)00401-6
Publikováno v:
Diamond and Related Materials. 12:403-407
Up to now high performance devices have mainly been realized on HTHP single crystals with limited size. However, diamond of single crystal quality can also be grown on SrTiO 3 substrate using an iridium buffer layer. For the first time p-type surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a81bf469315e3e3d442f287d80ef1b7b
https://doi.org/10.1016/s0925-9635(03)00068-2
https://doi.org/10.1016/s0925-9635(03)00068-2
Autor:
M. Kubovic, E. Kohn, Martin Neuburger, A. Kaiser, S.E. Coe, A. Tajani, D.J. Twitchen, M. Schwitiers, H. El-Haji, M. Dixon
Publikováno v:
European Radar Conference, 2005. EURAD 2005..
We report the utilization of synthetic diamond grown by chemical-vapour-deposition (CVD) for use as metal-semiconductor field-effect-transistors (MESFETs). The lack of a shallow n-type donor means that diamond-based electronic devices are unipolar (p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77b260296b2ffe58fac6cf0d26b1d5b
https://doi.org/10.1109/eurad.2005.1605549
https://doi.org/10.1109/eurad.2005.1605549