Zobrazeno 1 - 10
of 18
pro vyhledávání: '"M. Krnac"'
Publikováno v:
Sensors and Actuators A: Physical. :99-105
Design and construction of GaAs-based micromachined thermal converter device consisting of a high electron mobility transistor (as a microwave heater) and a thin film resistor (as a temperature sensor), integrated on 1 μm thick polyimide fixed GaAs/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c4ce89dd9c82f71024c0a30d830ccf4
https://doi.org/10.1016/j.sna.2005.04.027
https://doi.org/10.1016/j.sna.2005.04.027
Autor:
M. Krnac, Miroslav Husak, Š. Haščík, P. Hrkút, Tibor Lalinský, L. Matay, Ivan Kostic, Jiri Jakovenko, Ž. Mozolová
Publikováno v:
International Journal of Computational Engineering Science. :543-546
Design technology and characterization of new GaAs island based Micromechanical Thermal Converter (MTC) device are presented. The MTC device introduced consists of pHEMT as a microwave heater and thin film polySi/Ni resistor as a temperature sensor m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0540c4579f69e70764ca00040b55f4ef
https://doi.org/10.1142/s146587630300171x
https://doi.org/10.1142/s146587630300171x
Autor:
J. Škriniarová, M. Krnac, Tibor Lalinsky, Ž. Mozolová, L. Matay, Sˇ. Haščík, M. Tomáška, I. Kosticˇ, E. Burian, M. Drzˇík
Publikováno v:
Microelectronics International. 20:43-47
A new micromachining technology of mechanically fixed and thermally insulated cantilevers, bridges and islands was developed to be used for design of GaAs heterostructure based microelectromechanical systems (MEMS) devices. Based on the micromachinin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b828f58ba4fe9a94621464bbf7c096
https://doi.org/10.1108/13565360310455526
https://doi.org/10.1108/13565360310455526
Autor:
S. Hascik, M Klasovitý, M. Tomáška, Ivan Kostic, Tibor Lalinský, M. Drzik, M. Krnac, Z. Mozolova
Publikováno v:
Journal of Micromechanics and Microengineering. 12:465-469
GaAs/AlGaAs and InGaP membrane bridges micromachined on GaAs substrates have been developed for use as supporting micromechanical structures for coplanar waveguides. The internal mechanical stresses potentially induced in these micromechanical device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d6a14faa9d1546a6828ba15f8afa4b
https://doi.org/10.1088/0960-1317/12/4/320
https://doi.org/10.1088/0960-1317/12/4/320
Publikováno v:
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.
RF power transistor design in standard CMOS technology for the power amplifier in the frequency region of 1800MHz is key issue in this work. Transistor application in standard RF power amplifier topology is discussed in the sense of output power as w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93945a43bf756aa32814e5893b4062a9
https://doi.org/10.1109/asdam.2002.1088517
https://doi.org/10.1109/asdam.2002.1088517
Publikováno v:
14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562).
The design, fabrication and characterization of microwave transmission structures on thin composite semiconductor/dielectric substrates, technologically compatible with pseudomorphic HFETs, for micromechanical microwave transmitted power sensors are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d36e690d4c18e89362ee981b4bc06bf6
https://doi.org/10.1109/mikon.2002.1017965
https://doi.org/10.1109/mikon.2002.1017965
Publikováno v:
Scopus-Elsevier
The design, fabrication and characterization of microwave transmission structure on thin composite semiconductor/dielectric substrate technologically compatible with pseudomorphic HFETs for a micromechanical microwave transmitted power sensor are dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b1c87821bf74b45d7e21a418e27f373
https://doi.org/10.1109/edmo.2001.974309
https://doi.org/10.1109/edmo.2001.974309
Publikováno v:
13th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2000. Conference Proceedings (IEEE Cat. No.00EX428).
GaAs MSM photodetectors with AlAs/GaAs DBR structures designed for an operating wavelength of 840 nm were characterized in the frequency and time domains. The frequency response of the MSMs, using a lightwave set-up and HP8408 network analyzer, was m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ce0b7d6ff7d53e939375f7ef2c24d24
https://doi.org/10.1109/mikon.2000.914033
https://doi.org/10.1109/mikon.2000.914033
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Akademický článek
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