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pro vyhledávání: '"M. Kravetskii"'
Autor:
V. V. Tetyorkin, A. T. Voroschenko, M. Kravetskii, V. Lashkaryov, V. Vinnichenko, A. Sukach, I. Lucyshyn, A.I. Tkachuk
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 17:325-330
The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n 1.610 15 cm -3 at the temperature T = 77 K. Passivation and protection of mesa structures have been carried ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb3c6db10460d51756a787002109e93
https://doi.org/10.15407/spqeo17.04.325
https://doi.org/10.15407/spqeo17.04.325
