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Akademický článek
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Autor:
H. Miwa, Tatsuo Nakayama, Takashi Inoue, Koji Hirata, M. Kosaki, Yuji Ando, T. Uemura, Hironobu Miyamoto
Publikováno v:
IEEE Transactions on Electron Devices. 55:483-488
To improve the pinched-off characteristics of an AlGaN/GaN heterojunction field effect transistor (HJFET), the conduction band potential of an incorporated ALxGa1-xN buffer is designed to be upwardly convex in a band diagram. This approach utilizes t
Autor:
Hiroyuki Sazawa, M. Kosaki, Tomohisa Kato, K. Furuta, M. Kinoshita, Takeshi Mitani, Kazutoshi Kojima, Hajime Okumura, Shin-ichi Nakashima, Koji Hirata
Publikováno v:
Materials Science Forum. :1043-1046
AlGaN/GaN HFETs were fabricated around micropipes and on a domain boundary in a semi-insulating silicon carbide (SI-SiC) substrate and the DC characteristics of the fabricated devices were measured. Devices around micropipe showed no pinch-off or lar
Autor:
Tatsuo Nakayama, M. Kosaki, Masanobu Senda, Hironobu Miyamoto, Yasuhiro Okamoto, Masaaki Kuzuhara, K. Hataya, Koji Hirata, N. Shibata, Yuji Ando, Takashi Inoue
Publikováno v:
IEEE Transactions on Electron Devices. 51:2217-2222
Recessed-gate AlGaN-GaN heterojunction field-effect transistors (FETs) with a field-modulating plate (FP) have been successfully fabricated for high-voltage and high-power microwave applications. The developed recessed-gate FP-FET with a gate length
Autor:
H. Mitsui, F. Krahenbuhl, J. Smit, T. Tanaka, J. Densley, M. Nagao, K. Kadotani, M. Kahle, B. Bernstein, M. Kosaki, Michael G. Danikas
Publikováno v:
IEEE Electrical Insulation Magazine. 10:10-22
Many insulating materials and systems for superconducting electrical equipment have been developed in response to the severe demands of safe usage, such as in cryogenic temperature, high mechanical stresses, high radiation, etc. They have been design
Autor:
M. Kuzuhara, Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, N. Shibata, K. Hirata, M. Senda, K. Hataya, Tatsuo Nakayama, M. Kosaki, Takashi Inoue
Publikováno v:
International Meeting for Future of Electron Devices, 2004..
Gallium nitride (GaN) is attracting considerable attention for microwave high-power transistor material as presented in W. L. Pribble et al. (2002), K. Joshin et al. (2003), Y. Okamoto et al. (2004), Y.-F. Wu et al. (2003) and M. Kuzuhara (2003). Thi
Publikováno v:
CEIDP '05. 2005 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2005..
Dielectric measurement and image analysis are used to evaluate the hydrophobic condition of silicone rubber surface. Hydrophobicity of silicone rubber surface was studied by using image data analysis of sprayed water droplets on the sample surface. H
Autor:
Kazuyuki Tohyama, Masayuki Nagao, S. Masuda, Shingo Tsuboi, A. Fujita, M. Kosaki, Tetsuro Tokoro
Publikováno v:
CEIDP '05. 2005 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2005..
Polyethylene is widely used as the insulator for power cable. By using dissipation current waveform observation system, which is developed by authors, frequency dependences of dissipation current waveform for LDPE film has been investigated and repor
Autor:
M. Kosaki, Masayuki Nagao, S. Masuda, Shingo Tsuboi, Kazuyuki Tohyama, A. Fujita, Tetsuro Tokoro, Yoshinao Murata
Publikováno v:
CEIDP '05. 2005 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2005..
Dissipation current waveform observation method, which has been developed by authors, is very powerful technique to detect high field nonlinear dielectric property and by using this method, not only the various kinds of numerical processing but also