Zobrazeno 1 - 10
of 30
pro vyhledávání: '"M. Kamal Saadi"'
Publikováno v:
Semiconductor Science and Technology. 17:870-879
We review how the tight-binding method provides a particularly useful approach to understand the electronic structure of GaInNAs alloys, and use it to derive a modified k?p model for the electronic structure of GaInNAs heterostructures. Using the tig
Autor:
Wolfram Heimbrodt, A. Lindsay, A. M. Kamal Saadi, H. Grüning, Peter J. Klar, Eoin P. O'Reilly, Wolfgang Stolz, J. Koch, P. M. A. Vicente
Publikováno v:
physica status solidi (b). 223:163-169
The pressure and temperature dependence of quantum well transitions in GaNxAs1—x/GaAs quantum well structures with xN = 1.8% and various well widths grown by metal organic vapour phase epitaxy were studied by photomodulated reflectance (PR) spectro
Autor:
M. Kamal-Saadi, Stelios A. Choulis, Wolfgang Stolz, B.A. Weinstein, Alfred R. Adams, T. J. C. Hosea, E.P. O'Reily
Publikováno v:
physica status solidi (b). 223:151-156
We report photo-modulated reflectance studies under applied pressure and variable temperature, and related calculations, that probe the influence of N-related resonant anti-bonding states on the electronic structure of dilute III–N–V quantum well
Publikováno v:
Physical Review B. 60:7772-7775
The energy of electronic states of a two-dimensional electron gas (2DEG) confined in a one-sided n-doped ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ asymmetric quantum well (QW) in
Autor:
Bernard Etienne, I. Elmezouar, M L Sadowski, W. Zawadzki, M. Kamal-Saadi, Andre Raymond, Sandrine Juillaguet
Publikováno v:
Semiconductor Science and Technology. 14:915-920
Cyclotron resonance (CR) and quantum transport measurements are performed on three GaAs/Ga0.67Al0.33As heterostructures in the quantum Hall regime at T = 2 K. The relaxation time and the 2D electron density Ns are determined fitting the CR transmissi
Autor:
A. Homer, M. Kamal-Saadi, C. M. Ciesla, C J G M Langerak, R. A. Stradling, C. R. Pidgeon, G. Bauer, Erich Gornik, Gunther Springholz, B. N. Murdin, Josef Oswald
Publikováno v:
Physica E, 2, 121-125
Scopus-Elsevier
Scopus-Elsevier
Landau-level lifetimes are determined from saturation cyclotron resonance (CR) in wide parabolic wells, quantum wells and bulk PbTe-Pb1-xEuxTe systems. These narrow gap structures exhibit strong band non-parabolicity necessary to terminate the normal
Publikováno v:
Solid State Communications. 106:263-268
We have studied the effects of a tilted magnetic field on the magneto-photoluminescence intensities in a GaAs/GaAlAs modulation doped single quantum well. For small tilt angles, the parallel component of the magnetic field induces an increase of the
Autor:
Bernard Etienne, M. Kamal Saadi, P. Vicente, Andre Raymond, M. Kubisa, W. Zawadzki, B. Couzinet
Publikováno v:
Solid-State Electronics. 40:109-112
Interband photoluminescence from asymmetric modulation-doped GaAsGaAlAs quantum wells in the presence of a magnetic field has been investigated. The free-carrier Landau level excitations as well as transitions between magneto-donor and free hole s
Autor:
M. Kamal Saadi, W. Zawadzki, Bernard Etienne, B. Couzinet, M. Kubisa, Andre Raymond, P. Vincente
Publikováno v:
Solid State Communications. 96:901-905
Interband magneto-photoluminescence from asymmetric modulation-doped GaAsGaAlAs quantum wells has been investigated. In addition to the free-carrier Landau level excitations, transitions between magneto-donor and free hole states have been observe
Autor:
T. J. C. Hosea, B. A. Weinstein, Peter J. Klar, Stelios A. Choulis, Stanko Tomić, Eoin P. O'Reilly, M. Kamal-Saadi, Alf R. Adams
We report pressure dependent photomodulated reflectance (PR) measurements on a series of dilute-N InGaNAs/GaAs multiple quantum wells (MQWs). Our experimental results indicate the presence of important N-related disorder effects due to different near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff0b08d462fe7484766be8d19ae4702b
https://hdl.handle.net/20.500.14279/1415
https://hdl.handle.net/20.500.14279/1415