Zobrazeno 1 - 10
of 114
pro vyhledávání: '"M. Kalitzova"'
Publikováno v:
Materials Science and Engineering: B. 142:126-134
The investigation presented in this paper is related to the electrochromic (EC) behavior of sputtered and CVD deposited films of WO 3 and W/Mo based mixed oxide films. The electrochromic effect is a reversible change in the film transmittance under a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d95d3984ed6f2690fe2a67c0d2df00
https://doi.org/10.1016/j.mseb.2007.06.020
https://doi.org/10.1016/j.mseb.2007.06.020
Autor:
Daniela Gogova, Giuseppe Zollo, Christo Angelov, Gianfranco Vitali, Kostadinka Gesheva, Emil Vlakhov, Yordan G. Marinov, Nikolai Pashov, Tatyana Ivanova, M. Kalitzova
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 229:65-72
The effect of high-frequency electromagnetic field (HFEMF) on the electrical properties of metal ion beam implanted silicon was studied. Silicon wafers, (1 0 0) oriented, were implanted with Zn + , Te + or Bi + with energy of 50 keV and fluences from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ab914974df8844b1d2604708017b525
https://doi.org/10.1016/j.nimb.2004.10.088
https://doi.org/10.1016/j.nimb.2004.10.088
Autor:
C. Muntele, M. Kalitzova, V. A. Ignatova, Oleg I. Lebedev, Yordan G. Marinov, Kostadinka Gesheva, E. S. Vlakhov, Renaat Gijbels
Publikováno v:
Vacuum: the international journal and abstracting service for vacuum science and technology
The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0522ea627d02f3322df75899bbac8709
https://doi.org/10.1016/j.vacuum.2004.07.055
https://doi.org/10.1016/j.vacuum.2004.07.055
Publikováno v:
Journal of Materials Science: Materials in Electronics. 14:783-786
Nanosized precipitation in high-dose Zn+- and Bi+-implanted Si is investigated by high-resolution transmission electron microscopy of cross-sectional specimens. In spite of the different diffusivities of Zn and Bi in Si, their low solubility results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984f434957df8099da265d98cae88d5c
https://doi.org/10.1023/a:1026296103855
https://doi.org/10.1023/a:1026296103855
Autor:
Marian Tzolov, D. Dimova-Malinovska, Ivan Gueorguiev Ivanov, N Tzenov, Gianfranco Vitali, M. Kalitzova, Giuseppe Zollo, C. Pizzuto
Publikováno v:
Scopus-Elsevier
ZnO:Al films were deposited by RF magnetron sputtering in triode configuration applying an external DC electric field to the substrates. Reflection high-energy electron diffraction measurements characterized the different films as consisting of rando
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::631d0fed9ca3dbbd81d7a17ff6d89528
https://doi.org/10.1016/s0040-6090(01)01182-8
https://doi.org/10.1016/s0040-6090(01)01182-8
Autor:
M. Kalitzova, Ivan Gueorguiev Ivanov, Gianfranco Vitali, Giuseppe Zollo, C. Pizzuto, D. Dimova-Malinovska, N Tzenov, Marian Tzolov
Publikováno v:
Thin Solid Films. 379:28-36
Highly conductive and transparent in the visible range Al-doped ZnO (ZnO:Al) and undoped ZnO films have been deposited by RF magnetron sputtering. Reflection high-energy electron diffraction observations characterized them as textured. The habitus of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::553f70ee12fa18443d494a1c2b6677ea
https://doi.org/10.1016/s0040-6090(00)01413-9
https://doi.org/10.1016/s0040-6090(00)01413-9
Publikováno v:
Vacuum. 58:516-522
The effects of N 2 annealing atmosphere on implanted and low-power pulsed-laser annealed (LPPLA) InP matrix are discussed. The analyses were performed, by using several complementary techniques such as RBS, Raman spectroscopy, SIMS and electrical mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fa3c2e2e07aaa409d1945b37a3b36c9
https://doi.org/10.1016/s0042-207x(00)00214-1
https://doi.org/10.1016/s0042-207x(00)00214-1
Publikováno v:
Vacuum. 51:285-288
The effect of bismuth ion implantation (dose range 1015–1018 cm−2) on the surface morphology of monocrystalline silicon was investigated by Atomic Force Microscopy (AFM) and Cross-Sectional Transmission Electron Microscopy (XTEM) and the data obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d4c9573961574f049a4a9700f71aca5
https://doi.org/10.1016/s0042-207x(98)00176-6
https://doi.org/10.1016/s0042-207x(98)00176-6
Publikováno v:
Scopus-Elsevier
Low-power pulsed-laser annealing was applied to Zn+-implanted InP samples. In order to avoid surface oxidation during the treatment, the laser irradiation was carried out in inert ambient of nitrogen at different pressures. The analytical techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baef9d5292d568d0072aafb0a4555893
https://doi.org/10.1063/1.366300
https://doi.org/10.1063/1.366300
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 132:418-424
Transmission electron microscopy and related diffraction techniques are applied to characterize the structural modifications induced in a (1 0 0) silicon substrate by a bismuth ion implantation at room temperature. Calculations were performed to prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b6e418c39b70c9c3468852bb2d93a1a
https://doi.org/10.1016/s0168-583x(97)00420-5
https://doi.org/10.1016/s0168-583x(97)00420-5