Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. K. Rathi"'
Publikováno v:
SINDH UNIVERSITY RESEARCH JOURNAL -SCIENCE SERIES. 51:653-660
Power distribution system having various buses, branches and loads that ultimately rises the power losses and from few decades, integration of solar and wind distributed generations has ever increased attention in radial distribution network (RDN). T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d44f24067e77a5a859aa522be3fa11
https://doi.org/10.26692/surj/2019.12.104
https://doi.org/10.26692/surj/2019.12.104
Autor:
C.A. Paulson, Xueyan Song, M. K. Rathi, Smita Jha, Susan E. Babcock, Thomas F. Kuech, Luke J. Mawst
Publikováno v:
Thin Solid Films. 520:2147-2154
Previous work on pseudomorphic SiGe on Si has shown that a significant reduction in the threading dislocation density can be achieved through appropriate ion beam processing. Helium ion implantation was used in an analogous study to induce strain rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b96e499bd4bbeb56a73eb940a802b3b
https://doi.org/10.1016/j.tsf.2011.09.028
https://doi.org/10.1016/j.tsf.2011.09.028
Publikováno v:
Journal of Electronic Materials. 38:2023-2032
The interfacial charge density of regrown structures was studied for several␣different material systems: GaAs, InGaAs/InP, and InAlAs-InGaAs superlattice structures on InP. The particular application of interest is in the␣fabrication of nanoscale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebea95e7808365d50715d545e0dc4cf
https://doi.org/10.1007/s11664-009-0887-z
https://doi.org/10.1007/s11664-009-0887-z
Autor:
M. K. Rathi, Susan E. Babcock, Jerry R. Meyer, Igor Vurgaftman, J.Y.T. Huang, A.A. Khandekar, Xueyan Song, Luke J. Mawst, Thomas F. Kuech
Publikováno v:
Journal of Crystal Growth. 310:4826-4830
GaAs-based heterostructures comprised of GaAs1−xNx–GaAs1−ySby (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63fc6c4f2553db3905fb3187864d0817
https://doi.org/10.1016/j.jcrysgro.2008.09.006
https://doi.org/10.1016/j.jcrysgro.2008.09.006
Publikováno v:
Journal of Crystal Growth. 296:117-128
The growth mechanisms of GaSb in a metal–organic vapor-phase epitaxy (MOVPE) system were studied for both trimethyl gallium (TMG)/trimethyl antimony (TMSb) and triethyl gallium (TEG)/TMSb growth chemistries. The effect of growth temperature and pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::658d0f59b252fac5619bb8b104c58fdc
https://doi.org/10.1016/j.jcrysgro.2006.08.025
https://doi.org/10.1016/j.jcrysgro.2006.08.025
Autor:
J. H. Park, T. F. Kuechb, Paul F. Nealey, Jeremy Kirch, M. K. Rathi, Chi-Chun Liu, Luke J. Mawst
Publikováno v:
2009 IEEE LEOS Annual Meeting Conference Proceedings.
Diblock copolymer nanopatterning and selective growth is utilized to produce InGaAsP/In 0.53 Ga 0.47 As/InGaAsP Quantum Dots on InP substrates, demonstrating RTPL near 1.6 µm. Electroluminescence near 1.25 µm is achieved from ridge-waveguide device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a0abf3f04eed8db67d3f6cf7f735e96
https://doi.org/10.1109/leos.2009.5343359
https://doi.org/10.1109/leos.2009.5343359
Autor:
M. K. Rathi, Jeremy Kirch, Luke J. Mawst, Paul F. Nealey, Chi-Chun Liu, Thomas F. Kuech, J. H. Park
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
To realize the theoretical advantages of Quantum Dots (QDs) as the active region for diode lasers, the selective growth of QDs on patterned substrates were investigated. The substrate nanopatterning and QD formation was realized by diblock copolymers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2f45fbd588c020ac97ecbfb20e14b1a
https://doi.org/10.1109/iciprm.2009.5012413
https://doi.org/10.1109/iciprm.2009.5012413
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
Passivation of interfaces corresponding to the nanoposts' sidewalls in InP-based intersubband quantum-box (IQB) lasers has resulted in interfacial-state densities ≪ 1011/cm2. High-quality regrowths of semi-insulating InP around dry-etched, passivat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aeca1a13d74c578adac75be2491cc30
https://doi.org/10.1109/iciprm.2009.5012428
https://doi.org/10.1109/iciprm.2009.5012428
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
GaAsSb-GaAsN-based type-II ‘W’ structures have been studied for mid-IR (1.3–1.6µm) emission. Post growth annealing increases the photoluminescence (PL) intensity of the structures. Temperature dependent PL show a charge localization effect due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc0ea7d0b1ea02cf0e47440b9783125
https://doi.org/10.1109/iciprm.2009.5012496
https://doi.org/10.1109/iciprm.2009.5012496
Publikováno v:
SPIE Proceedings.
The conventional approach to fabricate semiconductor based QDs is based on the Stranski-Krastnow (SK) growth mode, which has enjoyed considerable success in device applications. However, the SK QD approach is complicated by the randomness of the QD s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::370a861303eb997c5d84ecc69f74166b
https://doi.org/10.1117/12.810882
https://doi.org/10.1117/12.810882