Zobrazeno 1 - 10
of 21
pro vyhledávání: '"M. K. Kumar"'
Autor:
Hima Bindu Duvuru, S.K. Shaw, S.K. Alla, Nand Kishore Prasad, Nidhi Gupta, M. K. Kumar, Sher Singh Meena, B. B. V. S. Vara Prasad
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:20088-20098
In the present communication, the effect of Zr substitutions in cobalt oxide (ZrxCo3−xO4, where x = 0.01, 0.05, 0.1, 0.3 and 0.5) nanoparticles over their structural, magnetic and electric properties have been investigated. The nanoparticles were p
Publikováno v:
ANZ Journal of Surgery. 90:1528-1529
Publikováno v:
Indian Journal of Physics. 87:757-762
The effect of Bi2O3 and PbO on the physical and luminescence properties of Eu3+:PbO–Bi2O3–WO3–B2O3 glasses is presented. The increase in the concentration of Bi2O3 causes UV shift in the optical absorption spectra and increase in the intensitie
Publikováno v:
Photosynthetica. 50:549-556
The leaf water potential, gas-exchange parameters and chlorophyll fluorescence were evaluated in five common oil palm (Elaeis guineensis Jacq.) tenera hybrids 913X1988, 1425X2277, 748X1988, 7418X1988, and 690X1988 under water deficit with an aim to i
Autor:
Chhandak Mukherjee, Dongzhi Chi, Chandan Kumar Sarkar, Goutam Kumar Dalapati, C. K. Maiti, Tanmoy Das, Han Gao, Sandipan Mallik, Mrinal K. Hota, Chandreswar Mahata, M. K. Kumar
Publikováno v:
Thin Solid Films. 522:267-273
Ultra thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by atomic layer deposition process. Important electrical properties such as, interface trap density, charge trapping behavior, and low-frequency noise charact
Autor:
Sandipan Mallik, M. K. Kumar, C. K. Maiti, Goutam Kumar Dalapati, Chandreswar Mahata, Mrinal K. Hota, Dongzhi Chi, Chandan Kumar Sarkar, Han Gao
Publikováno v:
ECS Transactions. 35:513-520
Ultra thin HfO2 high-k gate dielectric has been deposited directly on Si0.81Ge0.19 by the atomic layer deposition (ALD) process. HfO2 layers were characterized by grazing incidence x-ray diffraction (GIXRD) to examine crystallinity. In this work it i
Autor:
Sing Yang Chiam, Sivashankar Krishnamoorthy, Han Gao, M. K. Kumar, Sukant K. Tripathy, Lee Kheng Tan
Publikováno v:
ACS Catalysis. 1:300-308
We report on TiO2 thin films with superior photocatalytic efficiency due to an increase in its exciton carrier generation induced by the plasmonic field of the underlying silver nanoparticles. TiO2 thin films are deposited on supported silver nanopar
Autor:
Dongzhi Chi, M. K. Kumar, Andrew See Weng Wong, Ghim Wei Ho, Goutam Kumar Dalapati, Akash Kumar, C. K. Chia
Publikováno v:
Key Engineering Materials. 443:504-509
Sputtered-deposited ZrO2 gate dielectric on epitaxial-GaAs/Ge substrates have been studied for complementary-metal-oxide-semiconductor (CMOS) applications. The epitaxial-GaAs (epi-GaAs) on Ge susbstrates with AlGaAs interlayer was grown by metal-orga
Publikováno v:
The Journal of Physical Chemistry C. 113:6381-6389
We report that a very thin film of titania, with thickness controlled to the order of its Debye length, exhibits reversible on/off electrical switching effects upon hydrogen/air exposure at room te...
Publikováno v:
16th International Workshop on Physics of Semiconductor Devices.
The HfO 2 /p-GaAs metal-oxide-semiconductor (MOS) structures have been fabricated by developing and simulating an optimized process recipe. The optical dielectric constants and refractive indices of atomic-layer-deposited (ALD) HfO 2 films and the Ga