Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. K. Indika Senevirathna"'
Autor:
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041102-041102-12 (2023)
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm−3. In S-MBE, pre-oxidized gallium in the form of a molecular bea
Externí odkaz:
https://doaj.org/article/5c8dd87e738d470789d55d5159c1238e
Autor:
Graham A. Cooke, M. K. Indika Senevirathna, Mark Vernon, Michael D. Williams, Garnett B. Cross, Alexander Kozhanov
Publikováno v:
Journal of Vacuum Science & Technology B. 38:034015
The authors present a quantitative secondary ion mass spectrometry (SIMS) analysis of the useful ion yield of magnesium dopant in a gallium nitride matrix. A quadrupole SIMS instrument was used to analyze an Mg-doped GaN sample grown by metal organic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0ffaddef05a72462efaf50c9be4cfa
https://doi.org/10.1116/1.5144500
https://doi.org/10.1116/1.5144500
Autor:
Nikolaus Dietz, Kucukgok Bahadir, Ian T. Ferguson, Sampath Gamage, Andrew G. Melton, Brian D. Thoms, Mustafa Alevli, Ananta R. Acharya, M. K. Indika Senevirathna
Publikováno v:
Applied Surface Science. 268:1-5
The thermal stability of InN layers grown on sapphire by high-pressure chemical vapor deposition has been studied by thermal desorption, atomic force microscopy, X-ray diffraction, and infrared reflection measurements. Desorption products from sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7ad6acdbb3c2a51cf5a7630f3c1b2d
https://doi.org/10.1016/j.apsusc.2012.10.184
https://doi.org/10.1016/j.apsusc.2012.10.184
Autor:
M. K. Indika Senevirathna, Ian T. Ferguson, Andrew Melton, Nikolaus Dietz, A. G. Unil Perera, Max Buegler, Sampath Gamage, Ananta R. Acharya, Ramazan Atalay, Liqin Su, Axel Hoffmann
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:031511
The influence of super-atmospheric reactor pressures (2.5‐18.5bar) on the electrical and structural properties of InN epilayers deposited on GaN/sapphire (0001) templates by high-pressure chemical vapor deposition has been studied. The epilayers we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd9bc09ee4a69746a9e542a100cbac5
https://doi.org/10.1116/1.4705727
https://doi.org/10.1116/1.4705727