Zobrazeno 1 - 10
of 35
pro vyhledávání: '"M. K. Bakhadyrkhanov"'
Publikováno v:
Inorganic Materials. 58:1-6
Publikováno v:
Technical Physics Letters. 48:1-4
Autor:
M. K. Bakhadyrkhanov, Z. T. Kenzhaev
Publikováno v:
Technical Physics. 66:851-856
Publikováno v:
Semiconductors. 55:542-545
Autor:
G. A. Ikhtiyarova, Kh. F. Zikrillayev, Z. T. Kenzhaev, D. Melebaev, S. B. Isamov, M. K. Bakhadyrkhanov
Publikováno v:
Applied Solar Energy. 56:13-17
By the diffusion obtained the Si 〈B, P〉 (group I) and Si 〈B, P + Ni〉 (group II) structures with deep p–n-junctions. It is demonstrated that the parameters of silicon photovoltaic cells with deep p–n-junctions are improved due to nickel do
Publikováno v:
Technical Physics Letters. 45:959-962
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C fo
Autor:
S. B. Isamov, S. A. Tachilin, M. K. Bakhadyrkhanov, G. Kh. Mavlonov, Kh. M. Iliev, K. S. Ayupov
Publikováno v:
Technical Physics. 64:385-388
Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature. It is shown that irradiation leads to a si
Autor:
E. B. Saitov, N. F. Zikrillaev, S. A. Tachilin, S. V. Koveshnikov, M. K. Bakhadyrkhanov, S. A. Valiev
Publikováno v:
Applied Solar Energy. 52:278-281
This article considers the technology of fabricating clusters of nickel atoms in a silicon crystalline lattice with controlled parameters. Silicon solar cells with clusters of nickel atoms have been fabricated and their parameters determined. It has
Publikováno v:
Applied Solar Energy. 51:258-261
We show the ability to extend the spectral sensitivity range of silicon photoelements due to the formation of nanoscale structures—quantum dots based on the Si2AnB8–n binary elementary cells—both in the bulk and on the surface of the samples th
Publikováno v:
Inorganic Materials. 51:767-771
We have studied interaction of multiply charged manganese nanoclusters with Se and Te impurity atoms in silicon after simultaneous and sequential codoping. The results demonstrate that, after diffusion doping, certain thermal annealing conditions lea