Zobrazeno 1 - 10
of 21
pro vyhledávání: '"M. Jurdit"'
Publikováno v:
Journal of Instrumentation
Journal of Instrumentation, 2017, 12 (09), pp.T09008-T09008. ⟨10.1088/1748-0221/12/09/T09008⟩
Journal of Instrumentation, IOP Publishing, 2017, 12 (09), pp.T09008-T09008. ⟨10.1088/1748-0221/12/09/T09008⟩
Journal of Instrumentation, 2017, 12 (09), pp.T09008-T09008. ⟨10.1088/1748-0221/12/09/T09008⟩
Journal of Instrumentation, IOP Publishing, 2017, 12 (09), pp.T09008-T09008. ⟨10.1088/1748-0221/12/09/T09008⟩
International audience; There is growing interest in energy-sensitive photon-counting detectors based on high flux X-ray imaging. Their potential applications include medical imaging, non-destructive testing and security. Innovative detectors of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::875128e0dbdd5a15bf6a12c821e96326
https://hal.science/hal-01722869
https://hal.science/hal-01722869
Autor:
J. Todeschini, B. Icard, S. Manakli, M. Jurdit, Laurent Pain, Blandine Minghetti, S. Leseuil, K. Docherty
Publikováno v:
Japanese Journal of Applied Physics. 45:6462-6467
Summary form only given. After the last successful results obtained these last years, EBDW (E-beam direct write) use for ASIC manufacturing is now demonstrated. However, throughput and resolution capabilities need to be improved to push its interest
Autor:
S. Manakli, J. Todeschini, Laurent Pain, Peter Hahmann, Yves Laplanche, M. Jurdit, Ulf Weidenmueller, Daniel Henry
Publikováno v:
Microelectronic Engineering. :16-21
Electron beam direct write (EBDW) promises a good solution in lithography applications, where standard optical lithography is not suitable. With shrinking dimensions in semiconductor technologies the overlay capability for the lithography has to be e
Autor:
N. Bicais-Lepinay, V. DeJonghe, B. Tavel, M. Jurdit, Stephane Denorme, C. Boccaccio, F. Andre, M. Aminpur, S. Manakli, M. Broekaart, J. Todeschini, C. Laviron, S. Smith, B. Icard, C. Reddy, B. Borot, Nicolas Planes, S. Jullian, Thomas Skotnicki, F. Guyader, Frederic Boeuf, J.P. Jacquemin, P. Morini, J. Bustos, N. Gierczynski, Pascal Gouraud, P. Brun, Franck Arnaud, M. Mellier, F. Salvetti, C. Ortolland, B. Duriez, Laurent Pain
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
This work highlights the realization and 0.248/spl mu/m/sup 2/ to 0.334/spl mu/m/sup 2/ SRAM bit-cells with conventional bulk technology based on 19/spl Aring/ CET SiON gate oxide, poly-silicon gate electrode, and mobility enhancement techniques for
Autor:
Frederic Boeuf, S. Manakli, A. Beverina, M. Broekaart, J. Todeschini, M. Jurdit, Daniel Henry, Francois Leverd, Stephane Denorme, Pascal Gouraud, Ph. Brun, V. Wang, G. Bervin, V. De Jonghe, Blandine Minghetti, Laurent Pain, B. Icard
Publikováno v:
SPIE Proceedings.
With the strong increase of mask complexity and associated price for each new technology node, mask less lithography represents more and more an interesting and complementary alternative for ASIC manufacturing especially in the fields of low volume a
Autor:
Daniel Henry, B. Icard, Laurent Pain, S. Manakli, J. Todeschini, Blandine Minghetti, M. Jurdit, V. DeJonghe, V. Wang
Publikováno v:
SPIE Proceedings.
Electron Beam Direct Write (EBDW) lithography represents a low cost and a rapid way to start basic studies for advance devices and process developments (1,2) . Patterning for sub-45nm node technology requires the development of high performance proce
Autor:
J. Todeschini, M. Bidaud, J. Rosa, H. Bernard, Franck Arnaud, M. Jurdit, D. Sotta, B. Duriez, J. Grant, Laurent Pain, Thomas Skotnicki, N. Bicais-Lepinay, Pierre Morin, J. Bustos, C. Chaton, Francois Wacquant, R. El-Farhane, Frederic Boeuf, Pascal Gouraud, M.T. Basso, S. Manakli, S. Jullian, V. DeJonghe, B. Tavel, M. Gaillardin
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
In this work, a low-cost 45nm node platform for general purpose and low power applications based on conventional bulk approach is proposed. Performant Lg=30nm/45nm devices with SiON gate oxide, shallow junctions and process induced strain are demonst
Autor:
S. Manakli, K. Docherty, L. Pain, J. Todeschini, M. Jurdit, B. Icard, S. Leseuil, B. Minghetti
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2005.
Autor:
M. Woo, R. Faure, X. Bossy, H. Leininger, Yves Laplanche, Franck Arnaud, J. Todeschini, A. Beverina, G. Bervin, B. Tavel, M. Jurdit, P. Stolk, Laurent Pain, R. Palla, S. Tourniol, M. Broekaart, K. Brosselin, Daniel Henry, S. Manakli, Veronique De Jonghe, F. Judong, Pascal Gouraud
Publikováno v:
SPIE Proceedings.
The introduction of Electron Beam Direct Write lithography into production represents a challenging alternative to reduce cost and cycle time increase induced by the introduction of new generation nodes. This paper details the development work perfor
Autor:
M. Denais, J. Todeschini, R.A. Bianchi, Damien Lenoble, Laurent Pain, Y. Laplanche, Franck Arnaud, H. Brut, M. Broekaart, Nicolas Planes, V. Vachellerie, M. Woo, A. Beverina, Pierre Morin, R. Difrenza, Bertrand Borot, C. Perrot, H. Leninger, Francois Wacquant, D. Barge, David Roy, F. Salvetti, D. Ceccarelli, N. Emonet, V. DeJonghe, P. Stolk, B. Tavel, B. Duriez, L. Vishnobulta, I. Guilmeau, Y. Loquet, Frederic Boeuf, T. Devoivre, N. Bicais, J.P. Reynard, M. Jurdit, K. Rochereau, R. Palla, F. Judong, M. Bidaud, P. Vannier, D. Reber
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
A 65nm CMOS platform employing General Purpose (GP) and Low Power (LP) devices and 0.5 /spl mu/m/sup 2/ 6T-SRAM bit-cells was developed using both conventional design and low cost CMOS process flow incorporating a strained silicon solution. Fully wor