Výsledky vyhledávání - "M. J. VASILE"

The characterization of titanium nitride by x‐ray photoelectron spectroscopy and Rutherford backscattering

Autor: F. A. Baiocchi, A. B. Emerson, M. J. Vasile

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:99-105

X‐ray photoelectron spectroscopy (XPS) spectra have been obtained for TiNx, with x=0.25, 0.50, and 1.0, as determined by Rutherford backscattering (RBS) analyses, and with no detectable oxygen content. We find the shape of the Ti 2p transition to b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::155bcaee6c9fc0def35648073691f7a9
https://doi.org/10.1116/1.576995

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Vacuum Annealing Effects on the Surface Stoichiometry of InGaAsP

Autor: B. Schwartz, M. J. Vasile, J. L. Yeh, S. Z. Liu

Publikováno v: Journal of The Electrochemical Society. 137:1319-1320

The use of the binary and quaternary systems InP and In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}P{sub y} for the fabrication of long wavelengths (i.e., 1.3-1.6{mu}m) LED's and lasers is a well-established approach. Our work is focused on the quaterna

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb99a4585f0cd458323bd1fdeb2394b0
https://doi.org/10.1149/1.2086659

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Focused ion beam milling: Depth control for three-dimensional microfabrication

Autor: M. J. Vasile, S. Liu, Z. Niu, W. Zhang, R. Nassar

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2350

Ion milling with a focused ion beam (FIB) is a potential method for making micromolds, which will then be the primary elements in the mass production of micro- or mini-objects by embossing or injection molding. The challenge lies in controlling the i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::474eb3b4b7c2cc839c7548cebd3d24ec
https://doi.org/10.1116/1.589644

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Polycrystalline tungsten and iridium probe tip preparation with a Ga+ focused ion beam

Autor: M. J. Vasile, L. C. Hopkins, Lloyd R. Harriott, J. E. Griffith

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:335

We have used a Ga+ focused ion beam (FIB) milling technique to produce sharp scanning‐probe microscope tips. The FIB procedure employs a roughly 0.2‐μm‐diam 20 keV Ga ion beam vector scanned in an annular pattern across the apex of an electroc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce50ec48470233aee75cf9b911806c29
https://doi.org/10.1116/1.588376

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Line profile measurement with a scanning probe microscope

Autor: M. J. Vasile, L. C. Hopkins, G. L. Miller, H. M. Marchman, S. A. Schwalm, J. E. Griffith

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2473

Profilometry of high‐aspect‐ratio, submicron lithographic features with a scanning force microscope is possible if the instrument satisfies several requirements. The probe must be slender enough to reach into narrow holes without sacrificing stab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a8a43ea2e47309b2fe51f4ea29f866f
https://doi.org/10.1116/1.586649

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Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage

Autor: Kevin S. Jones, E. Lane, Stephen J. Pearton, A. E. Von Neida, Nancy M. Haegel, M. J. Vasile, K. T. Short, T. R. Fullowan

Publikováno v: Journal of Applied Physics. 65:1281-1292

The reactive ion etching of GaAs with a CCl2F2:O2 discharge was investigated as a function of gas flow rate (10–60 sccm), total pressure (2–50 mTorr), power density (0.25–1.31 W cm−2), gas composition (0%–70% O2), and etch time (1–64 min)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4612fb9b64a5360adeece3d993e4f018
https://doi.org/10.1063/1.343023

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