Zobrazeno 1 - 10
of 11
pro vyhledávání: '"M. J. Schurman"'
Autor:
C. R. Abernathy, J. D. MacKenzie, Brent P. Gila, Fan Ren, M.A Marcus, M. J. Schurman, Randy J. Shul, S. J. Pearton, Minghwei Hong, Albert G. Baca
Publikováno v:
Solid-State Electronics. 42:2177-2181
GaN MIS diodes were demonstrated utilizing AlN and Ga2O3(Gd2O3) as insulators. A 345 A of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a SVT RF N2 plasma. For the Ga2O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1731cdbf484991ba3d1cb9f0c8cb0813
https://doi.org/10.1016/s0038-1101(98)00213-5
https://doi.org/10.1016/s0038-1101(98)00213-5
Publikováno v:
Journal of Electronic Materials. 26:243-251
We have studied the effect that structural defects and chemical impurities have on the electron mobility in GaN films grown in a production scale metalorganic chemical vapor depositon system. Structural defects such as dislocations, stack-ing faults,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ada9250e3300e9e0ba28d0c66f37a8d1
https://doi.org/10.1007/s11664-997-0158-9
https://doi.org/10.1007/s11664-997-0158-9
Autor:
W. Grieshaber, Robert F. Karlicek, I. D. Goepfert, Erdmann Frederick Schubert, M. J. Schurman, C. Tran
Publikováno v:
Journal of Applied Physics. 80:4615-4620
saturate at high excitation densities. These dependences are in excellent agreement with experimental results. The relevance of the results for optoelectronic GaN devices is discussed. It is shown that the peak intensity of the yellow luminescence li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190850c3083b32e352a8b4b7346b1e51
https://doi.org/10.1063/1.363443
https://doi.org/10.1063/1.363443
Autor:
Y. Li, S. Krishnankutty, M. J. Schurman, Yicheng Lu, T. Salagaj, C. Yuan, R. M. Kolbas, R. A. Stall, William E. Mayo, C.-Y. Hwang, W. Kroll
Publikováno v:
Journal of Electronic Materials. 25:749-753
High quality InGaN thin films and InGaN/GaN double heterojunction (DH) structures have been epitaxially grown on c-sapphire substrates by MOCVD in a production scale multi-wafer-rotating-disc reactor between 770 to 840°C. We observed that shroud flo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc515c8beae5a81dc626531b504098e
https://doi.org/10.1007/bf02666535
https://doi.org/10.1007/bf02666535
Autor:
C. R. Abernathy, Fan Ren, S. J. Pearton, S. N. G. Chu, M. A. Marcus, M. J. Schurman, Albert G. Baca, Minghwei Hong
Publikováno v:
Applied Physics Letters. 73:3893-3895
Ga2O3(Gd2O3) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d06ac0b0564e5db4dc2da4605b78d43
https://doi.org/10.1063/1.122927
https://doi.org/10.1063/1.122927
Autor:
Hongen Shen, William E. Mayo, C.-Y. Hwang, Michael Wraback, M. J. Schurman, Yicheng Lu, R. A. Stall, Y. Li, T. Salagaj
Publikováno v:
MRS Proceedings. 395
The effects of hydrogen passivation in MOCVD grown Mg doped p-type GaN were studied using low temperature (5K) photoluminescence (PL) and secondary-ion-mass spectroscopy (SIMS). GaN films with different Mg doping level were annealed at 700° C in N2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01cb78d0087c6e4ca6c6565bb5ca810
https://doi.org/10.1557/proc-395-369
https://doi.org/10.1557/proc-395-369
Publikováno v:
MRS Proceedings. 395
We have investigated the relationship of the Hall electron mobility to the background carrier concentration in low pressure MOCVD grown GaN. The highest electron mobility (400 cm2 /V•s) of the unintentionally doped GaN was obtained at a carrier con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ebaddbc3371ff3603986fdecbad9ca0
https://doi.org/10.1557/proc-395-521
https://doi.org/10.1557/proc-395-521
Autor:
W. Kroll, T. Salagaj, S. Krishnankutty, A.G. Thompson, A. Gurary, C.-Y. Hwang, I. K. Shmagin, Richard A. Stall, Stephen J. Pearton, Y. Li, W. E. Mayo, C. Yuan, R. M. Kolbas, M. J. Schurman, Yicheng Lu
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2075
n‐ and p‐doped GaN thin films have been epitaxially grown on c‐sapphire substrates by metal‐organic chemical‐vapor deposition in a production scale multiwafer‐rotating‐disk reactor. The in situ doping was performed with material having
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f3b40d249e05bcea6634b386ec4e2b
https://doi.org/10.1116/1.588080
https://doi.org/10.1116/1.588080
Autor:
A. K. Sood, Ian T. Ferguson, P. Lamarre, Marion B. Reine, S. P. Tobin, R. Singh, Allen W. Hairston, M. J. Schurman, M. F. Taylor, Charles R. Eddy, K. K. Wong
Publikováno v:
Scopus-Elsevier
This paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 μm2 unit cells, operating at zero bias voltage, with a narrow-band UV response betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97a510b296203710c13b4bdc907d34ba
http://www.scopus.com/inward/record.url?eid=2-s2.0-0035558753&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0035558753&partnerID=MN8TOARS
Autor:
M. Macos, Brent P. Gila, C. R. Abernathy, Minghwei Hong, M. J. Schurman, J. D. MacKenzie, Fan Ren, Stephen J. Pearton, Randy J. Shul, Albert G. Baca
Publikováno v:
Scopus-Elsevier
GaN MIS diodes were demonstrated utilizing AIN and Ga2O3(Gd2O3) as insulators. A 345 Åof AIN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc76c9188c3e99623fcfaccf38d52d01
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031369603&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031369603&partnerID=MN8TOARS