Zobrazeno 1 - 10
of 15
pro vyhledávání: '"M. J. Ries"'
Publikováno v:
Journal of Applied Physics. 79:8204-8209
Data are presented on the photopumped laser operation of planar AlAs–GaAs superlattice (SL) minidisk lasers. The SL minidisk (70 A AlAs, 30 A GaAs; 100 periods; ∼37 μm diameter) is defined by impurity‐induced layer disordering (IILD), followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51738b957b9cd0bf854607b521c07063
https://doi.org/10.1063/1.362460
https://doi.org/10.1063/1.362460
Autor:
M. J. Ries, J. E. Epler, Dennis G. Deppe, D. C. Hall, Richard J. Matyi, Hisashi Shichijo, Nick Holonyak
Publikováno v:
Journal of Applied Physics. 69:6844-6849
Data are presented on the continuous (cw) 77–200 K operational characteristics of cw 300‐K AlxGa1−xAs‐GaAs quantum‐well heterostructure diode lasers grown on Si substrates. Operation is demonstrated for over 500 h with a junction temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65de90d7e1a9e24bbf4e2c3210511cee
https://doi.org/10.1063/1.347674
https://doi.org/10.1063/1.347674
Publikováno v:
Journal of Applied Physics. 79:8829-8831
Data are presented demonstrating the effect that cavity length, and thus Q, has upon quantum well heterostructure edge‐emitting laser diodes that are reduced to microcavity thickness. The lasers, with reduced mode density and enhanced spontaneous e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30ef163f77a359a62844501aee18ec90
https://doi.org/10.1063/1.362562
https://doi.org/10.1063/1.362562
Publikováno v:
Applied Physics Letters. 68:2035-2037
Data are presented demonstrating photopumped laser operation of a planar photonic lattice (∼1 μm thick) that is comprised of 9 μm disks with 2 μm separation arranged in a two‐dimensional hexagonal close‐packed pattern. The active region of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6b0743bfdc504bf0ad13270d301f977
https://doi.org/10.1063/1.116294
https://doi.org/10.1063/1.116294
Publikováno v:
Applied Physics Letters. 68:1540-1542
Data are presented on the 300 K photopumped (pulsed) laser operation of ultrathin (∼0.15 μm) planar microdisk lasers. The tiny lasers employ the wet oxidation of an AlGaAs layer beneath the disks to form semiconductor cavities that are in solid co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21fc7cdd7ddb4c9f4c9b7a4d1b9670f4
https://doi.org/10.1063/1.115692
https://doi.org/10.1063/1.115692
Publikováno v:
Applied Physics Letters. 67:3168-3170
Data are presented demonstrating edge‐emitting laser diode operation of AlyGa1−yAs– GaAs–InxGa1−xAs quantum well heterostructures modified by the formation of a buried native‐oxide distributed Bragg reflecting (DBR) mirror adding vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eed37d6f51ee4b18653b12e52ec075b
https://doi.org/10.1063/1.115151
https://doi.org/10.1063/1.115151
Autor:
E. I. Chen, Russell D. Dupuis, M.R. Islam, M. J. Ries, Steven A Maranowski, Nick Holonyak, Archie L. Holmes
Publikováno v:
Applied Physics Letters. 67:1107-1109
Data are presented on the 300 K photopumped (pulsed) laser operation of a visible‐spectrum (λ=650 nm) AlAs–AlGaAs/InAlP–InGaP quantum‐well heterostructure (QWH) crystal that utilizes high‐index‐contrast AlAs‐native‐oxide/Al0.6Ga0.4As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b6380a34de2417bf6450aa54810273c
https://doi.org/10.1063/1.114976
https://doi.org/10.1063/1.114976
Autor:
R. V. Chelakara, F. J. Ciuba, M.R. Islam, Nick Holonyak, Russell D. Dupuis, E. I. Chen, Steven A Maranowski, M. J. Ries, Archie L. Holmes
Publikováno v:
Applied Physics Letters. 66:2831-2833
The growth and fabrication of high‐quality vertical distributed Bragg reflectors (DBRs) utilizing layers of InAlP and the AlAs native oxide are reported. The III–V epitaxial structures employed in this work consist of alternating layers of InAlP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23201940317ab2c713b113571bb0e749
https://doi.org/10.1063/1.113444
https://doi.org/10.1063/1.113444
Autor:
M. J. Ries, P. A. Grudowski, E. I. Chen, T. A. Richard, Nick Holonyak, Russell D. Dupuis, J. G. Neff, Steven A Maranowski
Publikováno v:
Applied Physics Letters. 66:589-591
Data (300 and 77 K) are presented on the photopumped laser operation of AlxGa1−xAs–GaAs vertical cavity quantum well heterostructure crystals that exhibit enhanced hot‐carrier recombination. The mirrors defining the vertical cavity are formed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f2294e97a60f18d7c4489b5854f8bec
https://doi.org/10.1063/1.114022
https://doi.org/10.1063/1.114022
Publikováno v:
Applied Physics Letters. 65:740-742
Data are presented on the 300‐K continuous and pulsed photopumped laser operation of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructure (QWH) crystals that utilize large‐index‐step high‐contrast distributed Bragg reflector mirr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995da1406f817ae9117f05444a3ee895
https://doi.org/10.1063/1.112216
https://doi.org/10.1063/1.112216