Zobrazeno 1 - 10
of 15
pro vyhledávání: '"M. J. Pullin"'
Autor:
R. A. Stradling, C. C. Phillips, L. Hart, C. M. Ciesla, M. Livingstone, W. T. Yuen, Y B Li, D. J. Bain, M. J. Pullin, P. J. P. Tang, Ian Galbraith, C. R. Pidgeon
Publikováno v:
Physical Review B. 55:4589-4595
The band alignments and band offsets were investigated for In(As,Sb)/InAs superlattices of various periods and compositions. Magnetoabsorption experiments allowed identification of subband energies and in-plane reduced masses. Using an 8\ifmmode\time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::146c8a2af7c65a7a0c812552ab8299c7
https://doi.org/10.1103/physrevb.55.4589
https://doi.org/10.1103/physrevb.55.4589
Publikováno v:
Physical Review B. 55:4376-4381
We report the 0--5 T magnetoabsorption spectra of high-quality InAs epilayers grown by molecular-beam epitaxy on GaAs. Excitonic absorption is observed at all fields, and, from the absolute energy of the magnetoexciton absorption peak, the zero-field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39edf647ba8384b348c0e7041e70b41
https://doi.org/10.1103/physrevb.55.4376
https://doi.org/10.1103/physrevb.55.4376
Autor:
C. R. Pidgeon, P. J. P. Tang, S. J. Chung, C. C. Phillips, C. J. G. M. Langerak, B. N. Murdin, C. M. Ciesla, T.A. Malik, A. G. Norman, M. J. Pullin, Y B Li, W. T. Yuen, R. A. Stradling
Publikováno v:
Materials Science and Engineering: B. 44:260-265
The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs, -,Sb,/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AISb combinations is their high mobility and the applications are mainly concerned with optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1781a6339d627f1acdb3cbc62ad37b92
https://doi.org/10.1016/s0921-5107(96)01742-4
https://doi.org/10.1016/s0921-5107(96)01742-4
Autor:
C. C. Phillips, R. A. Stradling, C. R. Pidgeon, C J G M Langerak, M. J. Pullin, Ben Murdin, Dino A. Jaroszynski, Ian Galbraith, M. Livingstone, C. M. Ciesla, P. J. P. Tang
Publikováno v:
Journal of Applied Physics, 80, 2994-2997
Room-temperature pump-probe transmission experiments have been performed on an arsenic-rich InAs/InAs1-xSbx strained layer superlattice (SLS) above the fundamental absorption edge near 10 mu m, using a ps far-infrared free-electron laser. Measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f066bcee9ff4db834e4bcf8fdc7c6d3d
https://doi.org/10.1063/1.363157
https://doi.org/10.1063/1.363157
Autor:
M. J. Pullin, C. C. Phillips, Y B Li, R. A. Stradling, P. J. P. Tang, L. Hart, Andrew G. Norman, S. J. Chung
Publikováno v:
Semiconductor Science and Technology. 10:1177-1180
Arsenic-rich InAs/lnAs1-xSbx strained layer superlattices (SLSs) grown on GaAs substrates by molecular beam epitaxy (MBE) are studied for their potential application as infrared emitters. The long-wavelength emission (4-11 mu m) is highly sensitive t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d414612cfe419c59edba5b5951ba150
https://doi.org/10.1088/0268-1242/10/8/023
https://doi.org/10.1088/0268-1242/10/8/023
Publikováno v:
Semiconductor Science and Technology. 10:476-482
Infrared photoluminescence (PL) from InAs and InSb n-i-p-i superlattices grown by MBE has been found for the first time and has been studied over an extended temperature range. Quantum confined band-to-band transitions are observed at lambda approxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4b35e49246152387a6ab22c08edf5b6
https://doi.org/10.1088/0268-1242/10/4/016
https://doi.org/10.1088/0268-1242/10/4/016
Publikováno v:
Applied Physics Letters. 75:3437-3439
Negative luminescence operation is reported for p–n diode devices with type-II InAs/InAsSb strained-layer-superlattice active regions which have a spectral peak at 4.2 μm and a negative luminescence efficiency of up to 20%.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2886d97657aa58c5bc4d31b34f8181e9
https://doi.org/10.1063/1.125288
https://doi.org/10.1063/1.125288
Autor:
P. Moeck, H. R. Hardaway, R. A. Stradling, Chris Phillips, Joerg Heber, M. J. Pullin, W. T. Yuen
Publikováno v:
Applied Physics Letters. 74:2384-2386
Room-temperature InAs/InAs1−xSbx strained-layer superlattice light-emitting diodes (x∼8%) are reported that emit at λ∼4.2 μm with an internal efficiency of 2.8%. The structures are grown by molecular beam epitaxy on slightly mismatched InAs s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aeb389dd5c24e91dcbf3e40fd6a6e36
https://doi.org/10.1063/1.123859
https://doi.org/10.1063/1.123859
Autor:
Joerg Heber, P. J. P. Tang, M. J. Pullin, R. A. Stradling, Chris Phillips, L. Hart, W. T. Yuen, H. R. Hardaway
Publikováno v:
Applied Physics Letters. 72:3473-3475
300 K light-emitting diodes which emit at 5 and 8 μm with quasi-cw output powers of up to 50 and 24 μW, respectively, are reported. The devices have a single molecular beam epitaxy grown InAs/In(As, Sb) quantum well in the active region with a stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c711635365662ffd74d9a6a93a26f95
https://doi.org/10.1063/1.121670
https://doi.org/10.1063/1.121670
Autor:
Y B Li, L. Hart, W. T. Yuen, D. J. Bain, Ian Galbraith, S. J. Chung, P. J. P. Tang, M. J. Pullin, C. C. Phillips, R. A. Stradling
Publikováno v:
Applied Physics Letters. 69:2501-2503
InAs/InAs0.865Sb0.135 quantum wells are characterized using magneto‐photoluminescence. Band‐ to‐band transitions are found at energies lower than the band gaps of either the InAs or the InAs0.865Sb0.135 with photoluminescence emission at wavele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34a9f9c2c4112a5e96921053abb0660
https://doi.org/10.1063/1.117720
https://doi.org/10.1063/1.117720