Zobrazeno 1 - 10
of 131
pro vyhledávání: '"M. J. Powell"'
Publikováno v:
The Journal of hospital infection. 114
The global prevalence of extended-spectrum beta-lactamase-producing Escherichia coli is rising and is dominated by blaTo determine the conjugative ability of CTX-M-EC acquired by healthy volunteers after travel to South Asia, the proportion of travel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4b67ccd0fbac9bffdc22f36cbd1bd70d
https://pubmed.ncbi.nlm.nih.gov/33862156
https://pubmed.ncbi.nlm.nih.gov/33862156
Publikováno v:
Cryo letters. 40(1)
Isochoric freezing systems enable ice-free preservation of biological matter at subfreezing temperatures under the increased hydrostatic pressure.To examine the effects of pressure and exposure period on rat hearts preserved in an isochoric chamber.R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d99d967206a88e87c2756928a0a9cf86
https://pubmed.ncbi.nlm.nih.gov/30955033
https://pubmed.ncbi.nlm.nih.gov/30955033
Publikováno v:
Applied Physics Letters, 9, 108
Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46009983451ba7b48714db878236ff24
http://resolver.tudelft.nl/uuid:96517553-0687-4251-851d-0ac628ca7a97
http://resolver.tudelft.nl/uuid:96517553-0687-4251-851d-0ac628ca7a97
Publikováno v:
Journal of Non-Crystalline Solids. 352:1700-1703
Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec2553c1e76cb9b5cdcf7a55b43f008
https://doi.org/10.1016/j.jnoncrysol.2005.12.025
https://doi.org/10.1016/j.jnoncrysol.2005.12.025
Publikováno v:
Journal of Applied Physics. 93:5780-5788
We have developed a theoretical model to account for the kinetics of defect state creation in amorphous silicon thin film transistors, subjected to gate bias stress. The defect forming reaction is a transition with an exponential distribution of ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d9a525b2c8450745f3c262bacd8ee67
https://doi.org/10.1063/1.1565689
https://doi.org/10.1063/1.1565689
Publikováno v:
Journal of Non-Crystalline Solids. :1340-1344
We investigate the impact of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs). It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b10682f6fa31a8f67778a903b1a5e9a
https://doi.org/10.1016/s0022-3093(01)01098-5
https://doi.org/10.1016/s0022-3093(01)01098-5
Publikováno v:
Journal of Non-Crystalline Solids. :492-496
The rate of defect creation in amorphous silicon thin film transistors, under gate bias stress, is proportional to N a BT t b� 1 , where N BT is the bandtail carrier density. Experimentally a is 1.5–1.9, while b is 0.5–0.6. We have developed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37b6af36957c7fbfd60d858ec5499d4
https://doi.org/10.1016/s0022-3093(01)00959-0
https://doi.org/10.1016/s0022-3093(01)00959-0
Publikováno v:
Journal of Non-Crystalline Solids. :556-560
We present a new microscopic model for metastable Si dangling bond defect creation in hydrogenated amorphous silicon. Carrier localisation on short, weak Si–Si bonds causes the bond to break. One hydrogen atom from a nearby doubly hydrogenated Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1896f7711688d0cbdb7a3479eec519d6
https://doi.org/10.1016/s0022-3093(01)00965-6
https://doi.org/10.1016/s0022-3093(01)00965-6
Publikováno v:
Meat and Muscle Biology. 1:45-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d04d1708cbb9165a83707d857c9a0b38
https://doi.org/10.22175/rmc2017.042
https://doi.org/10.22175/rmc2017.042
Publikováno v:
Thin Solid Films. 383:117-121
We compared threshold voltage shifts in amorphous Si, microcrystalline Si and polycrystalline Si thin-film transistors (TFTs) in terms of a recently developed thermalization energy concept for a dangling-bond defect state creation in amorphous Si TFT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0aa371ad2619fc360082b9e2a2ffa14
https://doi.org/10.1016/s0040-6090(00)01581-9
https://doi.org/10.1016/s0040-6090(00)01581-9