Zobrazeno 1 - 10
of 23
pro vyhledávání: '"M. J. Poulton"'
This letter presents the design and characterization of a quasi-integrated Doherty power amplifier for base-station applications. The prototype is based on GaN on SiC 0.25- $\mu \text{m}$ 50-V transistors, whereas the passive matching networks are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25dcc87b3371fb1dcb1fc3dea9de65dc
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents the design and characterization of a Doherty power amplifier for small cells applications in the 1.7–2.7 GHz band. A quasi-monolithic realization is chosen for its cost advantages when compared to a fully-monolithic solution, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49ea5c18d099d7406526f3b6df532385
https://doi.org/10.1109/mwsym.2017.8058689
https://doi.org/10.1109/mwsym.2017.8058689
Publikováno v:
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.
We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48V drain supply and is packaged in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f3df657410eec6f1dbdcdd6f48fb942
https://doi.org/10.1109/csics.2009.5315739
https://doi.org/10.1109/csics.2009.5315739
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
Next generation commercial and military systems require high power amplifiers (HPAs) with superior performance such as higher efficiency, improved thermal performance, wider bandwidth and higher output power. Using an optimized 0.5um, 48V GaN-on-SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a219d9ee51c0265d7bbbd45a49312e
https://doi.org/10.1109/bipol.2009.5314127
https://doi.org/10.1109/bipol.2009.5314127
Publikováno v:
Water Research. 25:661-671
Four field experiments designed to simulate the effects of the individual components of farm waste effluent (increased ammonia, reduced dissolved oxygen concentrations) on the invertebrate fauna of receiving waters were carried out on two second orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dee6cea111f15319ac87c98684c1f523
https://doi.org/10.1016/0043-1354(91)90041-n
https://doi.org/10.1016/0043-1354(91)90041-n
Publikováno v:
Freshwater Biology. 25:507-513
SUMMARY 1. The drift of Gammarus pulex in a population in which approximately 20% of adults are infected with the acanthocephalan parasite Pomphorhynchus laevis was monitored at margin and mid-river sites in the River Teme, England over a 24-h period
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b328e5e57551ee7dc8d656e7b56a9b0d
https://doi.org/10.1111/j.1365-2427.1991.tb01393.x
https://doi.org/10.1111/j.1365-2427.1991.tb01393.x
Autor:
C. Peter McCahon, M. J. Poulton
Publikováno v:
Freshwater Biology. 25:169-178
SUMMARY. 1. A soft-water stream in upland mid-Wales was dosed with sulphuric acid, aluminium sulphate and limestone slurry to produce a zone of aluminium at low pH. and one of aluminium, low pH and added lime. 2. Three episodes of 24-h duration were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04ffde0783f74b52ae79c7d78e96adca
https://doi.org/10.1111/j.1365-2427.1991.tb00482.x
https://doi.org/10.1111/j.1365-2427.1991.tb00482.x
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 – 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100μs pulse width obtains an output power in the range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6216e882f0c33cdaa11e384996cb3ffd
https://doi.org/10.1109/mwsym.2008.4633163
https://doi.org/10.1109/mwsym.2008.4633163
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
This paper presents a high-efficiency UHF power amplifier (PA) using a GaN HEMT on a SiC substrate transistor as the active device. The PA delivers 65W with 82% power added efficiency (PAE), and 45W with 84% PAE at 370MHz, with supply voltages of 35V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ca07cffcf5c3a8304c8f074721b487
https://doi.org/10.1109/mwsym.2008.4633104
https://doi.org/10.1109/mwsym.2008.4633104
Autor:
M. J. Poulton, R. Vetury, D. S. Green, J. Martin, Jeffrey B. Shealy, K. Krishnamurthy, J. D. Brown, Sangmin Lee, Shawn R. Gibb
Publikováno v:
SPIE Proceedings.
This report will focus on the status of GaN HEMT based amplifier technology development at RFMD. This technology is based around GaN on semi-insulating SiC substrates for optimal thermal performance. RFMD's 0.5μm gate technology features high perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035737bf63f0861ffd34fcdaa90af2d5
https://doi.org/10.1117/12.763781
https://doi.org/10.1117/12.763781