Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. J. Peanasky"'
Publikováno v:
Journal of Electronic Materials. 29:426-429
Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utilizing these materials. We have used the;met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c3aaa30d5081aa073825e854e1a6753
https://doi.org/10.1007/s11664-000-0155-8
https://doi.org/10.1007/s11664-000-0155-8
Autor:
Steven A. Maranowski, P. N. Grillot, Changhua Chen, A. J. Moll, Herman C Chui, T. D. Osentowski, B. W. Liang, J.-W. Huang, M. J. Peanasky, S. A. Stockman, C. P. Kuo
Publikováno v:
Journal of Electronic Materials. 28:916-925
Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::760c11f732a369fc6ce07c1dca943f09
https://doi.org/10.1007/s11664-999-0220-x
https://doi.org/10.1007/s11664-999-0220-x
Publikováno v:
Journal of Crystal Growth. 195:63-68
Oxygen-related defects in An-containing semiconductors can degrade luminescence efficiency and reduce free carrier lifetime affecting the performance of light emitting devices. We have used the oxygen-doping source, diethylaluminum ethoxide, (C 2 H 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ac1c965be9ff2ce4f333490be0876a
https://doi.org/10.1016/s0022-0248(98)00677-0
https://doi.org/10.1016/s0022-0248(98)00677-0
Autor:
Dennis C Defevere, Robert M Fletcher, M. G. Craford, Dan A. Steigerwald, J. G. Yu, T. D. Osentowski, M. J. Peanasky, C. P. Kuo, K. G. Park, D. A. Vanderwater, Virginia M. Robbins, F. A. Kish, Frank M. Steranka
Publikováno v:
Applied Physics Letters. 64:2839-2841
Data are presented demonstrating the operation of transparent‐substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560–630 nm) sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1992ff2e8ec8a9a5f40f35ef4d80a7c7
https://doi.org/10.1063/1.111442
https://doi.org/10.1063/1.111442
Publikováno v:
Applied Physics Letters. 58:2012-2014
Very high brightness In(x)Ga(1−x)P light‐emitting diodes (LEDs) have been fabricated on GaP substrates by hydride vapor phase epitaxy. LEDs operating at wavelengths from 650 nm (red) to 565 nm (green) have been demonstrated. The brightest encapsu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b498216f527924cdc5e09d5474df0830
https://doi.org/10.1063/1.105024
https://doi.org/10.1063/1.105024
Publisher Summary This chapter discusses visible light-emitting diodes (LEDs). Visible LEDs have been available commercially since the 1960s. The early LEDs utilized the gallium arsenide phosphide (GaAsP) materials system. They were direct energy-gap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b5894fde20736dc777934d8dba8f2eb
https://doi.org/10.1016/s0080-8784(08)62487-4
https://doi.org/10.1016/s0080-8784(08)62487-4
Autor:
G.E. Hofler, Frank M. Steranka, Serge L Rudaz, A. J. Moll, S. A. Stockman, M. J. Ludowise, Jingxi Yu, J. Tarn, Steven A. Maranowski, Tim Osentowski, Lou W. Cook, Virginia M. Robbins, Dennis C Defevere, C. P. Kuo, Changhua Chen, M. G. Craford, M. J. Peanasky, Dan A. Steigerwald, Robert M Fletcher, K. G. Park, I. H. Tan, Frederick A. Kish, Michael D. Camras
Publikováno v:
Light-Emitting Diodes: Research, Manufacturing, and Applications.
A new class of LEDs based on the AlGaInP material system first became commercially available in the early 1990's. These devices benefit from a direct bandgap from the red to the yellow-green portion of the spectrum. The high efficiencies possible in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dc2c200b6c7ab3e563974a8dfc5941
https://doi.org/10.1117/12.271032
https://doi.org/10.1117/12.271032
Publikováno v:
MRS Proceedings. 484
Oxygen related defects in Al-containing semiconductors have been determined to degrade luminescence efficiency and reduce free carrier lifetime, affecting the performance of light emitting diodes and laser diodes. We have used the oxygen doping sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f98a631a572efdb4043098726746656f
https://doi.org/10.1557/proc-484-611
https://doi.org/10.1557/proc-484-611
Publikováno v:
The Journal of Chemical Physics. 83:6108-6112
The visible and infrared spectra of the 1 : 1 and 2 : 1 solid‐state complexes of hexamethylbenzene with tetracyanoethylene were investigated as a function of pressure up to 100 kbar. The degree of charge transfer is estimated as a function of press
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f6ef595ea4ee0ccf77453ac133e12e
https://doi.org/10.1063/1.449602
https://doi.org/10.1063/1.449602
Autor:
J. E. Epler, M. G. Craford, M. D. Camras, G. A. Herrmannsfeldt, M. J. Peanasky, Nick Holonyak, C. H. Wu, R. W. Kaliski, F. G. Kellert, M. J. Tsai, H. G. Drickamer
Publikováno v:
Journal of Applied Physics. 57:1734-1738
High‐pressure studies on high quality AlxGa1−xAs double heterostructure light emitting diodes (LEDs) grown by liquid phase epitaxy (LPE) are presented. The AlxGa1−xAs active region varies in composition from x∼0.25 to x∼0.53, i.e., through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373cad8b8fc7a4e551bdd83518aa4496
https://doi.org/10.1063/1.334446
https://doi.org/10.1063/1.334446