Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. J. P. Pirralho"'
Autor:
P. C. O. Braga, M. L. Peres, Eduardo Abramof, M. J. P. Pirralho, Paulo H. O. Rappl, D. A. W. Soares, F. S. Pena, Celso I. Fornari
Publikováno v:
Physical Review B. 95
We investigated the photoconductivity effect in $p$-type $\mathrm{P}{\mathrm{b}}_{1\ensuremath{-}x}\mathrm{E}{\mathrm{u}}_{x}\mathrm{Te}$ films for $x=0.01$, 0.02, 0.03, 0.05, and 0.06 at $T=300\phantom{\rule{0.16em}{0ex}}\mathrm{K}$. The measurement
Autor:
Paulo H. O. Rappl, F. S. Pena, Celso I. Fornari, S. Nakamatsu, M. L. Peres, Eduardo Abramof, D. A. W. Soares, D. P. A. Holgado, M. J. P. Pirralho
Publikováno v:
Applied Physics Letters. 114:112101
In this work, we present the results of photoconductivity measurements performed in the temperature range of 12 K–300 K on a 150 nm-thick Bi2Te3 film grown by molecular beam epitaxy on a (111) BaF2 substrate. A transition from negative to positive
Autor:
R. S. Fonseca, M. J. P. Pirralho, Eduardo Abramof, D. A. W. Soares, D. da Cruz Alves, F. S. Pena, Celso I. Fornari, M. L. Peres, Paulo H. O. Rappl
Publikováno v:
Materials Research Express. 6:059502
Autor:
M. J. P. Pirralho, F. S. Pena, R. S. Fonseca, Paulo H. O. Rappl, Celso I. Fornari, Eduardo Abramof, D. A. W. Soares, D. da Cruz Alves, M. L. Peres
Publikováno v:
Materials Research Express. 6:025915
Autor:
M. L. Peres, G Fornari, M. J. P. Pirralho, S. de Castro, Eduardo Abramof, Celso I. Fornari, J S Travelho, Paulo H. O. Rappl, Sérgio L. Morelhão, F. S. Pena
Publikováno v:
Materials Research Express. 5:116410
In this work, bismuth telluride films are grown by molecular beam epitaxy (MBE) on (111) BaF2 substrates, using stoichiometric Bi2Te3 and additional Te solid sources. The growth dynamics and structural defects are investigated in detail as function o
Autor:
D. A. W. Soares, M. J. P. Pirralho, F. S. Pena, Celso I. Fornari, Eduardo Abramof, M. L. Peres, Paulo H. O. Rappl
Publikováno v:
Applied Physics Letters. 111:192105
We investigated the photoconductivity effect in n-type PbTe/Pb0.88Eu0.12Te quantum wells for a temperature range of 300–10 K using infrared light. The measurements revealed that at high temperatures, the photoresponse has small amplitude. As temper
Autor:
M J P Pirralho, M L Peres, F S Pena, R S Fonseca, D da Cruz Alves, D A W Soares, C I Fornari, P H O Rappl, E Abramof
Publikováno v:
Materials Research Express; May2019, Vol. 6 Issue 5, p1-1, 1p
Autor:
M J P Pirralho, M L Peres, F S Pena, R S Fonseca, D da Cruz Alves, D A W Soares, C I Fornari, P H O Rappl, E Abramof
Publikováno v:
Materials Research Express; Feb2019, Vol. 6 Issue 2, p1-1, 1p
Autor:
C I Fornari, P H O Rappl, S L Morelhão, G Fornari, J S Travelho, S de Castro, M J P Pirralho, F S Pena, M L Peres, E Abramof
Publikováno v:
Materials Research Express; Nov2018, Vol. 5 Issue 11, p1-1, 1p