Zobrazeno 1 - 5
of 5
pro vyhledávání: '"M. J. Morschbacher"'
Autor:
D. L. P. de Lacerda, M. J. Morschbacher, J. C. R. Justen, G. F. Vasquez, A. L. D. Spigolon, T. R. Menezes, R. Skinner
Publikováno v:
Frontiers in Earth Science, Vol 11 (2023)
The elastic moduli are a function of properties that could vary between samples and change during maturation. Consequently, the effects of organic matter maturation on the elastic wave velocities of organic-rich rocks are challenging to describe. Thi
Externí odkaz:
https://doaj.org/article/b0f8f577304c45e0aa28dffab1b37167
Autor:
Mônica A. Cotta, M. P. F. de Godoy, F. Iikawa, M. J. Morschbacher, M. J. S. P. Brasil, J. M. J. Lopes, R. Magalhães-Paniago, J. R. R. Bortoleto, M. K. K. Nakaema
Publikováno v:
physica status solidi c. 4:238-240
We present structural and optical properties of type-II self-assembled InP/GaAs quantum dots using different techniques. The results reveal that the uncapped InP dots present an efficient optical emission and are partially relaxed: strain relaxation
Autor:
F.C. Zawislak, Kbk Teo, M. J. Morschbacher, William I. Milne, S. H. Dalal, J. M. J. Lopes, Daniel L. Baptista, S. P. Oei
Publikováno v:
Scopus-Elsevier
An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and
Autor:
M. K. K. Nakaema, José Roberto Ribeiro Bortoleto, M. J. S. P. Brasil, Joao Marcelo J. Lopes, M. P. F. de Godoy, A. B. Veloso, F. Iikawa, J. R. Madureira, M. J. Morschbacher, Paulo Fernando Papaleo Fichtner, Mônica A. Cotta
Publikováno v:
Applied Physics Letters. 91:121917
We investigated two stacked layers of InP∕GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single la
Autor:
F. Iikawa, M. J. Morschbacher, Paulo Fernando Papaleo Fichtner, Joao Marcelo J. Lopes, Mônica A. Cotta, M. J. S. P. Brasil, M. K. K. Nakaema, José Roberto Ribeiro Bortoleto, Rogério Magalhães-Paniago, M. P. F. de Godoy
Publikováno v:
Journal of Applied Physics. 101:073508
We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and photoluminescenc