Zobrazeno 1 - 2
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pro vyhledávání: '"M. J. Martı́n Martinez"'
Publikováno v:
Journal of Applied Physics. 84:5012-5020
A detailed study under forward-bias conditions of the physical origin of high frequency noise in p+(Si)-n (Si1−xGex) heterojunctions using ensemble Monte Carlo simulation is reported. Based on the internal magnitudes, we determine how the strained
Autor:
Wojciech Knap, Frederic Boeuf, Raúl Rengel, Yahya Moubarak Meziani, R. Tauk, Tomas Gonzalez, T. Skotnicki, Jerzy Łusakowski, M. J. Martı́n Martinez
Publikováno v:
Journal of Applied Physics. 101:114511
Room temperature electron mobility (μ) in nanometer Si metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate length (LG) down to 30 nm was determined by the magnetoresistance method. A decrease of μ with the decrease of LG was obse