Zobrazeno 1 - 10
of 25
pro vyhledávání: '"M. J. Mantini"'
Autor:
Grayson W. Walker, Michael D. Barton, C. David Stokes, Rama Venkatasubramanian, Christopher V. Cardine, M. J. Mantini, Nicholas G. Baldasaro, Peter Thomas
Publikováno v:
SPIE Proceedings.
The addition of advanced sensors, targeting systems and electronic countermeasures to military vehicles has created a strategic need for additional electric power. By incorporating a thermoelectric (TE) waste heat recovery system to convert available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889cf29dc7e217cb1706bfccd70832d5
https://doi.org/10.1117/12.920804
https://doi.org/10.1117/12.920804
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:817-822
A hydrogen plasma‐based technique for carbon removal has been combined with a modest anneal for oxide desorption at 720 °C to produce atomically clean Si(100)2×1 surfaces. Carbon and oxygen contamination can be removed from silicon surfaces by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50327ca74dab44e47ec4e5942f19228d
https://doi.org/10.1116/1.577678
https://doi.org/10.1116/1.577678
Publikováno v:
Journal of Applied Physics. 71:3842-3852
Recent studies [Hattangady et al., Appl. Phys. Lett. 57, 581 (1990)] have shown greatly reduced interface state densities (5×1010 cm−2 eV−1) in Ge‐based, metal‐insulator‐semiconductor structures with the use of an ultrathin, pseudomorphic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c6ea975cc5b7443a7cb3100cae6520b
https://doi.org/10.1063/1.350874
https://doi.org/10.1063/1.350874
Autor:
R. A. Rudder, G. G. Fountain, S. V. Hattangady, R. J. Markunas, M. J. Mantini, J. B. Posthill
Publikováno v:
Journal of Applied Physics. 68:1233-1236
In situ cleaning of GaAs surfaces has been achieved at 350 °C with a novel technique employing hydrogen that is excited and dissociated using a remote Ar discharge. Reconstructed surfaces characteristic of clean, As‐stabilized GaAs surfaces have b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f91e4c6e739519adb04eafe9ad0035a
https://doi.org/10.1063/1.346723
https://doi.org/10.1063/1.346723
Autor:
C Pettenkofer, M. J. Mantini, J. B. Posthill, R. E. Thomas, G. C. Hudson, T. P. Humphreys, R.J. Markunas, R. A. Rudder, D. P. Malta
Publikováno v:
Applied Physics Letters. 70:1257-1259
The role of chemisorbed hydrogen in the enhancement of low-energy electron emission from natural type IIb C(001) diamond surfaces has been investigated. A hydrogen induced low-energy emission peak, whose intensity was found to be a linear function of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4cb96603a73c8982eb4f84bd4e412c2
https://doi.org/10.1063/1.118545
https://doi.org/10.1063/1.118545
Autor:
G. G. Fountain, R. E. Thomas, M. J. Mantini, Robert J. Markunas, R. A. Rudder, G. C. Hudson, J. B. Posthill, D. P. Malta, T. P. Humphreys
Publikováno v:
Applied Physics Letters. 64:1929-1931
Polished nominal (100) surfaces of four types of diamonds were exposed to atomic hydrogen by hot filament cracking of H2 gas or by immersion in a H2 plasma discharge. Both types IIa and IIb (100) diamond surfaces exhibited the following characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a933699739c9cfffd85aa87dc8cdeac
https://doi.org/10.1063/1.111745
https://doi.org/10.1063/1.111745
Autor:
G. G. Fountain, R. A. Rudder, S. V. Hattangady, J. B. Posthill, Robert J. Markunas, M. J. Mantini
Publikováno v:
Applied Physics Letters. 59:339-341
Epitaxial Si films have been deposited on Si(100) at 300 °C by remote plasma‐enhanced chemical vapor deposition using SiH4/H2 mixtures with deposition rates as high as 25 A/min at these low temperatures. Hall measurements of the film show an unint
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f003aba6e8684fa999b70bcef3fc173
https://doi.org/10.1063/1.105589
https://doi.org/10.1063/1.105589
Autor:
D. J. Vitkavage, S. V. Hattangady, G. G. Fountain, R. A. Rudder, M. J. Mantini, Robert J. Markunas
Publikováno v:
Applied Physics Letters. 57:581-583
Significant improvements in gating of Ge surfaces are achieved with the use of thin, pseudomorphic Si interlayers. Metal‐insulator‐semiconductor structures with mid‐gap interface state densities of 5×1010 cm−2 eV−1 and showing no hysteresi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b6710903c5be725e24ad5f4b0ef879
https://doi.org/10.1063/1.104247
https://doi.org/10.1063/1.104247
Publikováno v:
MRS Proceedings. 416
Ultraviolet and X-ray photoelectron spectroscopy techniques have been employed in a preliminary study of the electronic structure of polycrystalline diamond films that have been grown on Si substrates by if-plasma enhanced chemical vapor deposition u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef15d288e0d916dc75904884f60b12d
https://doi.org/10.1557/proc-416-133
https://doi.org/10.1557/proc-416-133
Publikováno v:
MRS Proceedings. 416
The effects of surface damage on the secondary electron emission characteristics of a natural diamond (100) surface have been investigated using ultraviolet photoelectron spectroscopy and scanning electron microscopy. Surface damage was intentionally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d78afd266b406a613d54b34d25778b93
https://doi.org/10.1557/proc-416-311
https://doi.org/10.1557/proc-416-311