Zobrazeno 1 - 10
of 32
pro vyhledávání: '"M. J. Kirton"'
Autor:
M. J. Kirton, Steven M. De Ciantis
Publikováno v:
Educational and Psychological Measurement. 56:809-820
The study examined Kolb's Experiential Learning Theory through a psychometric analysis and revision of Honey and Mumford's Learning Style Questionnaire (LSQ) using a sample of 185 middle/senior managers in the UK and Eire. Kolb's theoretical two bipo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3a6e12329dea2a62579afc25a2ba5a0
https://doi.org/10.1177/0013164496056005007
https://doi.org/10.1177/0013164496056005007
Autor:
M. J. Kirton
Publikováno v:
Current Psychology. 10:315-317
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51326714ce5b652ba7ba3519ff7e1fe2
https://doi.org/10.1007/bf02686905
https://doi.org/10.1007/bf02686905
Publikováno v:
Applied Physics Letters. 57:372-374
We report the observation of highly asymmetric peaks in conductance data from silicon metal‐oxide‐semiconductor capacitors. By extending the standard surface‐potential fluctuation model to incorporate a range of capture cross sections at a give
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582d056c88cf13905263ad5a4d40d59f
https://doi.org/10.1063/1.103695
https://doi.org/10.1063/1.103695
Publikováno v:
Applied Physics Letters. 56:1245-1247
Using telegraph noise measurements on small n‐ and p‐channel metal‐oxide‐silicon field‐effect transistors, we have measured the entropy change associated with the change of the charge state of individual slow Si/SiO2 surface states. In n‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb627a3e54d6fa8aed7256f58521144
https://doi.org/10.1063/1.102527
https://doi.org/10.1063/1.102527
Publikováno v:
Winter Simulation Conference
We report on a comparative study of the performance of shared and distributed memory parallel simulation algo rithms on a large-scale military logistics simulation, and describe the nature of the application and its parallelisa tion in some detail. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf8e90dbb0e5096654dcfc2a5bd2ca4
https://doi.org/10.1145/256562.256876
https://doi.org/10.1145/256562.256876
Autor:
M. J. Kirton
Publikováno v:
R&D Management. 20:183-184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf62ef4b6975c89f2d1b72d0f4352ab
https://doi.org/10.1111/j.1467-9310.1990.tb00701.x
https://doi.org/10.1111/j.1467-9310.1990.tb00701.x
Autor:
M. J. Kirton, R. M. McCarthy
Publikováno v:
Psychological Reports. 57:1067-1070
63 subjects were asked to estimate personal scores and scores of others on the Kirton Adaption-Innovation Inventory after hearing a lecture on the theory. The close correlations between estimated and actual scores have useful implications as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eafb90c2f62bd6bf0c120373764ec136
https://doi.org/10.2466/pr0.1985.57.3f.1067
https://doi.org/10.2466/pr0.1985.57.3f.1067
Publikováno v:
Philosophical Magazine B. 42:577-582
Using a previously described Green function method, we have performed calculations of the electronic states at a line of vacancies in crystalline silicon. The results presented are discussed in terms of our current understanding of the isolated vacan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbeac5dd8da6026f725a07bd06fc40c
https://doi.org/10.1080/01418638008227299
https://doi.org/10.1080/01418638008227299
Publikováno v:
Physical Review B. 37:8346-8350
In the drain current of submicrometer silicon metal-oxide-semiconductor field-effect transistors, we have observed a new class of random telegraph signal which exhibits anomalous behavior. We discuss the various models that could account for these si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b75354f41264561f4c7c03c04bc71c82
https://doi.org/10.1103/physrevb.37.8346
https://doi.org/10.1103/physrevb.37.8346