Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Autor: J. T. Griffiths, T. Zhu, F. Oehler, R. M. Emery, W. Y. Fu, B. P. L. Reid, R. A. Taylor, M. J. Kappers, C. J. Humphreys, R. A. Oliver

Publikováno v: APL Materials, Vol 2, Iss 12, Pp 126101-126101-5 (2014)

Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped st

Externí odkaz: https://doaj.org/article/36f8b25e2cc5498790b171d574ea0cf9

Photoluminescence studies of cubic GaN epilayers

Autor: Church, Stephen, Hammersley, Simon, Mitchell, Peter, M. J. Kappers, Sahonta, S-L, Frentrup, Martin, Nilsson, D., Ward, J., Shaw, L. J., Wallis, David J, C. J. Humphreys, R. A. Oliver, Binks, David, Dawson, Philip

Publikováno v: Church, S, Hammersley, S, Mitchell, P, M. J. Kappers, Sahonta, S-L, Frentrup, M, Nilsson, D, Ward, J, Shaw, L J, Wallis, D J, C. J. Humphreys, R. A. Oliver,, Binks, D & Dawson, P 2017, ' Photoluminescence studies of cubic GaN epilayers ', Physica status solidi B-basic solid state physics . https://doi.org/10.1002/pssb.201600733

The luminescence properties of cubic GaN films grown upon 3C-SiC/Si (001) substrates by MOCVD were investigated. The spectra show luminescence peaks which are associated with donor bound exciton recombination and donor acceptor pair recombination. A

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3818::b87107f135b957cb3ffe9f7db7772497
https://www.research.manchester.ac.uk/portal/en/publications/photoluminescence-studies-of-cubic-gan-epilayers(fd9ee0d8-dfc1-43b0-9636-927e634b15df).html

Energy landscape and carrier wave‐functions in InGaN/GaN quantum wells

Autor: Rachel A. Oliver, Colin J. Humphreys, Duncan Watson-Parris, Philip Dawson, M. J. Kappers, M. J. Galtrey, M. J. Godfrey

Publikováno v: physica status solidi c. 7:2255-2258

Localisation lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrodinger equation. We have treated the distribution of indium atoms as random and found that these fluc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8cde19a7e3006bc54161566f79963840
https://doi.org/10.1002/pssc.200983516

Ligand exchange reactions in InGaAs metalorganic vapor-phase epitaxy

Autor: Robert F. Hicks, M. L. Warddrip, M. J. Kappers

Publikováno v: Journal of Crystal Growth. 191:332-340

Metalorganic vapor-phase epitaxy of In y Ga 1− y As from triethylgallium, trimethylindium and tertiarybutylarsine was studied using on-line infrared spectroscopy to monitor the organometallic compounds in the feed and effluent gases. The film compo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55f32293d8455600a5e2dce69872cc65
https://doi.org/10.1016/s0022-0248(98)00174-2

Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy

Autor: S. Gan, H. Qi, Lian Li, M. L. Warddrip, Robert F. Hicks, Byung-Kwon Han, M. J. Kappers

Publikováno v: Journal of Electronic Materials. 26:1189-1193

The rates of decomposition of carbon tetrachloride (CCl4), triethylgallium (TEGa), and tertiarybutylarsine (TBAs), and the rate of GaAs film growth, were measured as a function of the process conditions during organometallic vapor phase epitaxy. In a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1031d5a14b8d976c3c91c38c8af1344f
https://doi.org/10.1007/s11664-997-0018-7