Zobrazeno 1 - 10
of 1 924
pro vyhledávání: '"M. J. Kappers"'
Autor:
U. Wahl, J. G. Correia, A. R. G. Costa, T. A. L. Lima, J. Moens, M. J. Kappers, M. R. da Silva, L. M. C. Pereira, A. Vantomme
The interest in Be as an impurity in GaN stems from the challenge to understand why GaN can be doped p type with Mg, while this does not work for Be. While theory has actually predicted an acceptor level for Be that is shallower than Mg, it was also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b34737ee54ca533db2861feccc03ea6
https://lirias.kuleuven.be/handle/20.500.12942/711733
https://lirias.kuleuven.be/handle/20.500.12942/711733
Autor:
J. T. Griffiths, T. Zhu, F. Oehler, R. M. Emery, W. Y. Fu, B. P. L. Reid, R. A. Taylor, M. J. Kappers, C. J. Humphreys, R. A. Oliver
Publikováno v:
APL Materials, Vol 2, Iss 12, Pp 126101-126101-5 (2014)
Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped st
Externí odkaz:
https://doaj.org/article/36f8b25e2cc5498790b171d574ea0cf9
Autor:
Church, Stephen, Hammersley, Simon, Mitchell, Peter, M. J. Kappers, Sahonta, S-L, Frentrup, Martin, Nilsson, D., Ward, J., Shaw, L. J., Wallis, David J, C. J. Humphreys, R. A. Oliver, Binks, David, Dawson, Philip
Publikováno v:
Church, S, Hammersley, S, Mitchell, P, M. J. Kappers, Sahonta, S-L, Frentrup, M, Nilsson, D, Ward, J, Shaw, L J, Wallis, D J, C. J. Humphreys, R. A. Oliver,, Binks, D & Dawson, P 2017, ' Photoluminescence studies of cubic GaN epilayers ', Physica status solidi B-basic solid state physics . https://doi.org/10.1002/pssb.201600733
The luminescence properties of cubic GaN films grown upon 3C-SiC/Si (001) substrates by MOCVD were investigated. The spectra show luminescence peaks which are associated with donor bound exciton recombination and donor acceptor pair recombination. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3818::b87107f135b957cb3ffe9f7db7772497
https://www.research.manchester.ac.uk/portal/en/publications/photoluminescence-studies-of-cubic-gan-epilayers(fd9ee0d8-dfc1-43b0-9636-927e634b15df).html
https://www.research.manchester.ac.uk/portal/en/publications/photoluminescence-studies-of-cubic-gan-epilayers(fd9ee0d8-dfc1-43b0-9636-927e634b15df).html
Autor:
Xiu, Huixin, Fairclough, Simon M., Gundimeda, Abhiram, Kappers, Menno J., Wallis, David J., Oliver, Rachel A., Frentrup, Martin
Publikováno v:
Journal of Applied Physics; 3/14/2023, Vol. 133 Issue 10, p1-7, 7p
Autor:
Dyer, D., Church, S. A., Ahumada-Lazo, R., Kappers, M. J., Halsall, M. P., Parkinson, P., Wallis, D. J., Oliver, R. A., Binks, D. J.
Publikováno v:
Nanoscale; 8/7/2024, Vol. 16 Issue 29, p13953-13961, 9p
Autor:
C J, Humphreys, J T, Griffiths, F, Tang, F, Oehler, S D, Findlay, C, Zheng, J, Etheridge, T L, Martin, P A J, Bagot, M P, Moody, D, Sutherland, P, Dawson, S, Schulz, S, Zhang, W Y, Fu, T, Zhu, M J, Kappers, R A, Oliver
Publikováno v:
Ultramicroscopy. 176
We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::02a9cde4621c90a36afe57e355f9b118
https://pubmed.ncbi.nlm.nih.gov/28196629
https://pubmed.ncbi.nlm.nih.gov/28196629
Autor:
Rachel A. Oliver, Colin J. Humphreys, Duncan Watson-Parris, Philip Dawson, M. J. Kappers, M. J. Galtrey, M. J. Godfrey
Publikováno v:
physica status solidi c. 7:2255-2258
Localisation lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrodinger equation. We have treated the distribution of indium atoms as random and found that these fluc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cde19a7e3006bc54161566f79963840
https://doi.org/10.1002/pssc.200983516
https://doi.org/10.1002/pssc.200983516
Publikováno v:
Journal of Crystal Growth. 193:305-315
Carbon tetrachloride is used to dope gallium arsenide and indium—gallium arsenide films with carbon during metalorganic vapor-phase epitaxy (MOVPE). In this study, the decomposition kinetics of CCl 4 and of the other precursors (triethylgallium, tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0fa25b569c1a5a9e2d57a920dfacca2
https://doi.org/10.1016/s0022-0248(98)00548-x
https://doi.org/10.1016/s0022-0248(98)00548-x
Publikováno v:
Journal of Crystal Growth. 191:332-340
Metalorganic vapor-phase epitaxy of In y Ga 1− y As from triethylgallium, trimethylindium and tertiarybutylarsine was studied using on-line infrared spectroscopy to monitor the organometallic compounds in the feed and effluent gases. The film compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f32293d8455600a5e2dce69872cc65
https://doi.org/10.1016/s0022-0248(98)00174-2
https://doi.org/10.1016/s0022-0248(98)00174-2
Autor:
M. J. Kappers, K. T. Higa, H. Yoon, Mark S. Goorsky, Robert F. Hicks, Byung-Kwon Han, Lian Li
Publikováno v:
Journal of Electronic Materials. 27:81-84
Thin films of InxGa1−xAs (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc21a3ec21308057dbc6e794a889395f
https://doi.org/10.1007/s11664-998-0193-1
https://doi.org/10.1007/s11664-998-0193-1