Zobrazeno 1 - 10
of 10
pro vyhledávání: '"M. J. Hÿtch"'
Publikováno v:
APL Materials, Vol 1, Iss 4, Pp 042117-042117 (2013)
To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mappe
Externí odkaz:
https://doaj.org/article/60bf47932d924a5e9518fb4fb41e441f
Autor:
C. Gatel, R. Serra, K. Gruel, A. Masseboeuf, L. Chapuis, R. Cours, L. Zhang, B. Warot-Fonrose, M. J. Hÿtch
Publikováno v:
Physical Review Letters
Physical Review Letters, 2022, 129 (13), pp.137701. ⟨10.1103/physrevlett.129.137701⟩
Physical Review Letters, 2022, 129 (13), pp.137701. ⟨10.1103/physrevlett.129.137701⟩
International audience; The metal-oxide-semiconductor (MOS) capacitor is one of the fundamental electrical components used in integrated circuits. While much effort is currently being made to integrate new dielectric or ferroelectric materials, capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e11736003cff1ccc1e1111dcd3aa95cd
https://hal.science/hal-03787333/document
https://hal.science/hal-03787333/document
Publikováno v:
Electron Microscopy and Analysis 1997 ISBN: 9781003063056
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b9ab97b89da75e32239e6ce576afe55
https://doi.org/10.1201/9781003063056-169
https://doi.org/10.1201/9781003063056-169
Autor:
N. V. Kryzhanovskaya, M. A. Yagovkina, G. A. Valkovsky, W. V. Lundin, N. A. Cherkachin, Andrey E. Nikolaev, M. M. Pavlov, A. V. Sakharov, S. O. Usov, A. F. Tsatsul’nikov, M. J. Hÿtch
Publikováno v:
Semiconductors. 44:828-834
The results of the study of structural and optical properties of short-period InGaN/GaN superlattices synthesized by MOCVD on sapphire substrates are presented. To form the superlattices, the method of periodic interruption of the growth of the InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cda39ee42a46294bfcd5d4f843846fd0
https://doi.org/10.1134/s1063782610060242
https://doi.org/10.1134/s1063782610060242
Publikováno v:
Zeitschrift für Metallkunde. 94:358-367
Lattice mismatched heterointerfaces are classified by a simple five parameter configuration space which allows to quantify the following properties: gradual partial coherence, distribution and localisation of misfit dislocations, anisotropy of strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db6fc305250087e90b2c865fc543c09
https://doi.org/10.3139/146.030358
https://doi.org/10.3139/146.030358
Autor:
M. J. Hÿtch
Publikováno v:
Revue de Métallurgie. 100:211-222
A quantitative method is described for the measurememnt of displacements and strains by high-resolution electron microscopy. The image is considered to be composed of periodic sets characterized by Fourier analysis. The local amplitude and geometric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1fa75df2d140e35ffe6acf081ebd99
https://doi.org/10.1051/metal:2003140
https://doi.org/10.1051/metal:2003140
Autor:
Yannick Champion, M. J. Hÿtch
Publikováno v:
The European Physical Journal Applied Physics. 4:161-164
Preliminary results are presented from the study of grain boundary structure in bulk nanocrystalline copper using high-resolution electron microscopy. A recently developed method of image analysis is applied to an experimental image of a grain bounda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0704f7bbfc1db9685a8f6f20ad2574f9
https://doi.org/10.1051/epjap:1998256
https://doi.org/10.1051/epjap:1998256
Autor:
A, Lubk, M D, Rossell, J, Seidel, Q, He, S Y, Yang, Y H, Chu, R, Ramesh, M J, Hÿtch, E, Snoeck
Publikováno v:
Physical review letters. 109(4)
Domain walls (DWs) substantially influence a large number of applications involving ferroelectric materials due to their limited mobility when shifted during polarization switching. The discovery of greatly enhanced conduction at BiFeO(3) DWs has hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0d3d6cf3f729ddab5f604a08044b0dfb
https://pubmed.ncbi.nlm.nih.gov/23006107
https://pubmed.ncbi.nlm.nih.gov/23006107
Autor:
M. J. Hÿtch, F. Houdellier
Publikováno v:
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ISBN: 9783540851547
Quantitative convergent-beam electron diffraction (CBED) is a well established technique for determining the amplitude and phase of structure factors, in particular the so-called three-phase structure invariant of non-centrosymmetric crystals [1,2].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6682cf072f3e020f58462285f1f2c8
https://doi.org/10.1007/978-3-540-85156-1_96
https://doi.org/10.1007/978-3-540-85156-1_96
Publikováno v:
Journal of Electron Microscopy; Jun2005, Vol. 54 Issue 3, p181-190, 10p