Zobrazeno 1 - 10
of 52
pro vyhledávání: '"M. J. Ashwin"'
Publikováno v:
AIP Advances, Vol 1, Iss 3, Pp 032159-032159-6 (2011)
The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases
Externí odkaz:
https://doaj.org/article/301646ee60d24b27a6fd3570acf802f6
Publikováno v:
Journal of Crystal Growth. 459:118-123
We report here the temperature-dependent incorporation kinetics of dimeric arsenic in InAs(001) homoepitaxy, using reflection high-energy electron diffraction (RHEED). Surface reconstructions, in combination with the RHEED investigation have provided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f73561333395939eb1b83e98ba15c4b8
https://doi.org/10.1016/j.jcrysgro.2016.10.050
https://doi.org/10.1016/j.jcrysgro.2016.10.050
Publikováno v:
Journal of Applied Physics
JOURNAL OF APPLIED PHYSICS
JOURNAL OF APPLIED PHYSICS
The influence of postgrowth thermal annealing on GaSbBi Schottky barrier diodes has been investigated. The effects of the annealing temperature and time on the material quality and electrical characteristics of the diodes have been studied. The I-V c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c24297522ef8ea06c41e2f5c3a7ed76
http://livrepository.liverpool.ac.uk/3050246/1/author_accepted_manuscript.pdf
http://livrepository.liverpool.ac.uk/3050246/1/author_accepted_manuscript.pdf
Autor:
Christopher W. Burrows, Thomas P. A. Hase, Gavin R. Bell, James D. Aldous, M. J. Ashwin, S. A. Hatfield
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
The simultaneous use of symmetric and grazing incidence X-ray diffraction in the characterisation of a pnictide material is demonstrated using MnSb epi-layers grown on compound semiconductor substrates. This combination of diffraction geometries enab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54dbd75f158b494108be84702f1f2160
https://doi.org/10.1109/iciprm.2016.7528549
https://doi.org/10.1109/iciprm.2016.7528549
Autor:
M. J. Ashwin, Jan Kujala, Filip Tuomisto, Ilja Makkonen, Jonatan Slotte, Natalie Segercrantz, Tim D. Veal
The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studied using positron annihilation spectroscopy and ab initio calculations. Doppler broadening measurements have been conducted on samples of GaNxSb1-x la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a480f4c91e6077eb839ac45ec9aabd46
https://aaltodoc.aalto.fi/handle/123456789/22342
https://aaltodoc.aalto.fi/handle/123456789/22342
Publikováno v:
Journal of Applied Physics. 95:6112-6118
The formation of ridge structures on 〈100〉 aligned mesa stripes defined on GaAs (001) substrates has been investigated as a function of the substrate temperature, V/III flux ratio, and GaAs deposition quantity. Across the entire range of depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8744cac032d09f32f40f22458fa19e4f
https://doi.org/10.1063/1.1699480
https://doi.org/10.1063/1.1699480
Publikováno v:
Semiconductor Science and Technology. 18:950-954
The self-assembled growth of GaAs on mesa stripes with a sidewall angle of ~65° formed on pre-patterned GaAs(001) substrates has been studied by secondary electron microscopy (SEM) and atomic force microscopy (AFM). Specific emphasis is placed on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::353aa1c3b4d2efff63784a25b27d7d05
https://doi.org/10.1088/0268-1242/18/11/307
https://doi.org/10.1088/0268-1242/18/11/307
Publikováno v:
Semiconductor Science and Technology. 17:1209-1212
InP thin films grown by solid source molecular beam epitaxy on InP(001) substrates have been studied by atomic force microscopy (AFM). The morphology of the films is highly dependent on growth temperature and the P2:In incident flux ratio. High subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23145de6ad67a1a6d6c9771d16d3d666
https://doi.org/10.1088/0268-1242/17/12/301
https://doi.org/10.1088/0268-1242/17/12/301
Autor:
Paul N. Stavrinou, R. E. Pritchard, Tim Jones, M. J. Ashwin, R. S. Williams, Glenn Parry, Rupert F. Oulton, J.H. Neave
Publikováno v:
Journal of Applied Physics. 90:475-480
Arrays of GaAs pyramids with square (001) bases of length 1–5 μm have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied by microreflection and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746afc3233cc5ce4c74386343053a013
https://doi.org/10.1063/1.1376419
https://doi.org/10.1063/1.1376419
Publikováno v:
Journal of Applied Physics. 83:4160-4167
We have studied the relationship between the surface morphology, Si doping behavior, and arsenic incorporation kinetics for GaAs(110) thin films grown on singular substrates by molecular beam epitaxy. To obtain films with good surface morphology, hom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2164f23036b76d20bafe01aa5b36b24e
https://doi.org/10.1063/1.367169
https://doi.org/10.1063/1.367169