Zobrazeno 1 - 10
of 11
pro vyhledávání: '"M. J. Anand"'
Publikováno v:
Emerging Research in Computing, Information, Communication and Applications ISBN: 9789811613418
In the current scenario, conventional techniques such as California mastitis test (CMT), somatic cell count (SCC), and gas chromatography was used for the detection of subclinical mastitis affected in cow milk. The drawbacks in these methods were tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d5c6061e650668cfce03c317a726b2
https://doi.org/10.1007/978-981-16-1342-5_53
https://doi.org/10.1007/978-981-16-1342-5_53
Publikováno v:
Computers and Devices for Communication ISBN: 9789811583650
In this paper, a dual-band fractal-based printed wearable antenna backed with frequency selective surface (FSS) array is proposed for C- and X-band applications. The proposed antenna is designed to operate at 6 and 8 GHz with a high realized gain of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c84c2c9a7785b2255955e9ac3c5a08dc
https://doi.org/10.1007/978-981-15-8366-7_42
https://doi.org/10.1007/978-981-15-8366-7_42
Publikováno v:
physica status solidi c. 10:1421-1425
We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83ca802e48484cd497df540d32959cde
https://doi.org/10.1002/pssc.201300219
https://doi.org/10.1002/pssc.201300219
Autor:
Binit Syamal, C. M. Manoj Kumar, K. Ranjan, Geok Ing Ng, S. C. Foo, M. J. Anand, S. Vicknesh, Xing Zhou, Subramaniam Arulkumaran
The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b78cd2df57d0fc76e15801fa3d95bd5a
http://hdl.handle.net/10220/25288
http://hdl.handle.net/10220/25288
Autor:
Hong Wang, M. J. Anand, R. Hofstetter, Geok Ing Ng, Kian Siong Ang, Gang Ye, Subramaniam Arulkumaran, S. C. Foo, Y. K. T. Maung, Yang Li
Publikováno v:
71st Device Research Conference.
Conventional Schottky-metal gate based GaN HEMTs (SB-HEMTs) suffer undesirable high gate leakage current (Igleak) issue. To reduce the Igleak, varieties of gate insulators like Si3N4, SiO2, Al2O3, Ga2O3, HfO2, Sc2O3 etc. have been demonstrated to obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::977fc78a35424612af5cdcc6810d4217
https://doi.org/10.1109/drc.2013.6633798
https://doi.org/10.1109/drc.2013.6633798
Publikováno v:
71st Device Research Conference.
GaN High-Electron-Mobility transistors (HEMTs) on Si substrate is emerging as the most suitable choice for commercialization due to its low cost and the availability of larger size even up to GaN on 200-mm diameter Si(1 11) substrate [1-3]. Most of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::217109c545e7b6272af30e6d3fcba39e
https://doi.org/10.1109/drc.2013.6633789
https://doi.org/10.1109/drc.2013.6633789
Autor:
Subramaniam Arulkumaran, Chandra Mohan Manoj Kumar, Gang Ye, Yang Li, R. Hofstetter, Hong Wang, Geok Ing Ng, M. J. Anand, Kian Siong Ang
Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16110568dc8641d8efabb19ff038422c
http://hdl.handle.net/10220/25659
http://hdl.handle.net/10220/25659
Publikováno v:
Applied Physics Express. 8:104101
The distribution of trap energy (DTE) levels was observed in the energy band gap of buffer GaN by temperature-dependent current transient measurements on AlGaN/GaN HEMTs under fully ON drain-stress (VD[ON]_Stress) conditions. The activation energies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb8c72b37829e615dbde464b7bcbf91e
https://doi.org/10.7567/apex.8.104101
https://doi.org/10.7567/apex.8.104101
Autor:
Yang Li, Subramaniam Arulkumaran, M. J. Anand, Gang Ye, Chandra Mohan Manoj Kumar, Zhihong Liu, Geok Ing Ng
Publikováno v:
Applied Physics Express. 8:041001
This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current–voltage (I–V) measurements reveal that the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de11f17d6b3e750a647685fcddee8987
https://doi.org/10.7567/apex.8.041001
https://doi.org/10.7567/apex.8.041001
Publikováno v:
Japanese Journal of Applied Physics. 54:036504
The impact of low-k dielectric benzocyclobutane (BCB) encapsulation on the electrical performance and structural stability of AlGaN/GaN HEMTs on Si were investigated. After BCB encapsulation, devices exhibited no degradation in their drain current de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb99df8f7cfaa4fab39d4bf015e8d71
https://doi.org/10.7567/jjap.54.036504
https://doi.org/10.7567/jjap.54.036504