Zobrazeno 1 - 10
of 138
pro vyhledávání: '"M. Inuishi"'
Autor:
Yoshito Nakazawa, M. Inuishi, Atsushi Sakai, Yasuo Yamaguchi, Hitoshi Matsuura, Katsumi Eikyu, Yutaka Akiyama
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss conside
Autor:
Kazuhiro Tsukamoto, S. Imaoka, M. Inuishi, Tsutomu Yoshihara, Yasumasa Tsukamoto, Hirofumi Shinohara, H. Kawashima, Yasuo Yamaguchi, Makoto Yabuuchi, Y. Oda, Koichiro Ishibashi, Mitsuhiko Igarashi, M. Takeuchi, Shigeki Ohbayashi, H. Makino, Koji Nii
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:820-829
In the sub-100-nm CMOS generation, a large local Vth variability degrades the 6T-SRAM cell stability, so that we have to consider this local variability as well as the global variability to achieve high-yield SRAM products. Therefore, we need to empl
Autor:
S. Maeda, Takashi Ipposhi, Yasuo Inoue, N. Kotani, M. Inuishi, Shigeto Maegawa, T. Nishimura, Hirotada Itami Kuriyama
Publikováno v:
IEEE Transactions on Electron Devices. 50:1451-1458
An idea for obtaining unique identification (ID) numbers using polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a logic LSI compatible process is proposed. Like an actual human fingerprint, the characteristic variations of poly-Si
Autor:
T. Nishimura, Takuji Matsumoto, S. Maeda, M. Inuishi, S. Maegawa, Yuuichi Hirano, K. Eikyu, Yutaro Yamaguchi
Publikováno v:
IEEE Transactions on Electron Devices. 49:55-60
We point out for the first time that floating-body effects cause the reduction of the saturation drive current in partially depleted (PD) Sol MOSFETs. It is demonstrated that when the channel concentration of the SOI MOSFETs is set higher in order to
Autor:
M. Inuishi, H. Komurasaki, T. Ipposhi, Takuji Matsumoto, S. Maegawa, Yoshiki Wada, Kimio Ueda, K. Yamamoto, Koichiro Mashiko, Yuuichi Hirano, S. Maeda, Yutaro Yamaguchi, T. Iwamatsu
Publikováno v:
IEEE Transactions on Electron Devices. 48:2065-2073
A 0.18 /spl mu/m silicon on insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology using hybrid trench isolation with high resistivity substrate is proposed and its feasibility for embedded RF/analog applications is demonstrated. T
Autor:
T. Ipposhi, T. Nishimura, S. Maeda, Takuji Matsumoto, Y. Hirano, M. Inuishi, Hiroshi Kawashima, K. Nii, T. Iwamatsu, S. Maegawa, Yutaro Yamaguchi
Publikováno v:
IEEE Transactions on Electron Devices. 48:2816-2822
Partial-trench-isolated (PTI) 0.18-/spl mu/m SOI-CMOS technology has been established to realize the body-tied structure and eliminate floating-body effects. The body potential of PTI SOI MOSFETs is fixed through the silicon layer under the PTI oxide
Autor:
Hiroki Shimano, T. Nishimura, K. Shimomura, M. Inuishi, T. Oashi, S. Komori, F. Morishita, Takahisa Eimori, F. Okuda, H. Miyoshi, T. Iwamatsu, Yutaro Yamaguchi, Y. Inoue, Kazutami Arimoto, Narumi Sakashita
Publikováno v:
IEEE Transactions on Electron Devices. 45:1000-1009
The newly designed scheme for a low-voltage 16 MDRAM/SOI has been successfully realized and the functional DRAM operation has been obtained at very low supply voltage below 1 V. The key process and circuit technologies for low-voltage/high-speed SOI-
Autor:
K. Fujii, Mikio Takai, M. Inuishi, T. Nishimura, Atsushi Kinomura, Yoshikazu Ohno, T. Kishimoto, Yuji Horino
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 130:524-527
One of the solutions to the reduction of soft errors is suppression of carrier collection generated by an energetic particle emitted from typical contaminants of packaging or wiring materials. Suppression of carrier collection by a retrograde well or
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 121:257-261
Nitrogen is not a commonly used ion species in Si ULSI. It cannot be used as an n-type dopant because of its low solubility in Si. However, it shows interesting properties such as the suppression of boron diffusion when applied to source/drain doping
Publikováno v:
2011 International Conference on Simulation of Semiconductor Processes and Devices.
We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz-Gilbert) micromagnetic si