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Autor:
P. A. Baudat, F. Gozzo, F. Morier‐Genoud, David Martin, M. L. Languell, M. Iilegems, Prasad L. Polavarapu, E. Tuncel, Alan V. Barnes, C. Dupuy, Norman Tolk, Giorgio Margaritondo, Carlo Coluzza, Xue Yang, J.L. Davidson, G. C. Chen, J. F. Smith, A. Rudra, J. T. McKinley, A. Ueda, R. G. Albridge
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2323-2326
The broad tunability (1–10 μm) and megawatt regime peak intensity available from the Vanderbilt Free‐Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band‐e