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pro vyhledávání: '"M. Iig"'
Publikováno v:
Materials Science and Technology. 14:1279-1282
A structural and optical study of GaInAs/GaAs heterostructures grown by molecular beam epitaxy on {100}, {311}, and {211} oriented GaAs substrates is reported. The structural analysis by X-ray diffraction reveals the presence of shear strain in the {
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfa2fd677e7f3491f219fcc168d608b4
https://doi.org/10.1179/mst.1998.14.12.1279
https://doi.org/10.1179/mst.1998.14.12.1279
