Zobrazeno 1 - 9 of 9 pro vyhledávání: '"M. I. Veksler"'
1
Degradation of MOS tunnel structures at high current density
Autor: M. I. Veksler, I. V. Grekhov, A. F. Shulekin
Publikováno v: Semiconductors. 32:668-672
The stability of tunneling-thin (2–3 nm) SiO2 films during prolonged flow of high-density currents (102–103 A/cm2) was investigated. A sharp increase in the charge which a tunneling MOS structure is capable of transmitting without degradation on
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a4669b02868dbca9388ed61fa9314b9
https://doi.org/10.1134/1.1187462
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2
Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator
Autor: T. P. Samsonova, Pavel Ivanov, I. V. Grekhov, M. I. Veksler, A. F. Shulekin
Publikováno v: Semiconductors. 32:1024-1026
The first observation of amplification of the photogeneration current in Au/SiO2/n-6H-SiC structures with a tunnel-thin insulator is reported. This effect can be used to increase the efficiency of existing UV-range 6H-SiC-based photodiodes. It also s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be889456995ab29b524acb0ddb69fcd6
https://doi.org/10.1134/1.1187538
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