Zobrazeno 1 - 10
of 37
pro vyhledávání: '"M. I. Tarasik"'
Дефектно-примесная инженерия. Радиационные эффекты в полупроводниках Исследовано влияние геттерирования неконтролируемых примесей п
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::417a3917747aebaad69f4e86e0ae38a3
http://elib.bsu.by/handle/123456789/215226
http://elib.bsu.by/handle/123456789/215226
Исследовано влияние упругих напряжений на диффузию имплантированного бора в слоях кремния, дополнительно легированных примесями IV гру
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::c3f73f204c366a013181568ff11868f1
http://elib.bsu.by/handle/123456789/187597
http://elib.bsu.by/handle/123456789/187597
Autor:
M. I. Tarasik, P. K. Sadovskii, V. I. Plebanovich, A. N. Petlitskii, Vladimir Odzhaev, A. R. Chelyadinskii
Publikováno v:
Physics of the Solid State. 60:20-22
The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4b2fdcdd009a31cc6d27d9f0b8e5cf4
https://doi.org/10.1134/s1063783418010158
https://doi.org/10.1134/s1063783418010158
Autor:
Tomasz N. Koltunowicz, M. I. Tarasik, Vladimir A. Skuratov, Andreas D. Wieck, S. V. Shpakovski, V. A. Filipenia, N. I. Gorbachuk, Nikolai A. Poklonski
Publikováno v:
Scopus-Elsevier
N.A. Poklonski, N.I. Gorbachuk, M.I. Tarasik, S.V. Shpakovski, V.A. Filipenia, V.A. Skuratov, A. Wieck and T.N. Koltunowicze,∗ Belarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus JSK Integral, 12 Korzhenevskogo, BY-220108 Minsk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f910e645dde1b4657189a7c826f751a8
https://doi.org/10.12693/aphyspola.120.111
https://doi.org/10.12693/aphyspola.120.111
Autor:
P. Węgierek, N.V. Frantskevich, A.M. Yanchenko, M. I. Tarasik, Aleksander K. Fedotov, Alexander V. Mazanik, Paweł Żukowski, Anis Saad, A.V. Frantskevich
Publikováno v:
Vacuum. 83:S103-S106
Standard 4.5 Ω cm n-type and 12 Ω cm p-type Cz Si wafers were implanted with helium ions of 300 keV energy and the fluences of 1 × 1015, 5 × 1015, 1 × 1016 or 2 × 1016 at/cm2 at room temperature. The implanted wafers were then annealed in vacuu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d3b1edd90099d980d0b5b55b6b066e
https://doi.org/10.1016/j.vacuum.2009.01.036
https://doi.org/10.1016/j.vacuum.2009.01.036
Autor:
P. K. Sadovskii, M. I. Tarasik, V. B. Odzhaev, Yu. B. Vasiliev, A. S. Turtsevich, A. R. Chelyadinskii
Publikováno v:
Physics of the Solid State. 55:1156-1158
A porous silicon layer as a getter of uncontrolled impurities has been prepared by implantation of Sb+ into silicon and subsequent thermal treatments. The lifetime of nonequilibrium charge carriers in n- and p-type silicon wafers with a getter layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecf74f4aacbc02dbb0838e0a98f1e68f
https://doi.org/10.1134/s1063783413060292
https://doi.org/10.1134/s1063783413060292
Autor:
N. I. Gorbachuk, S. V. Shpakovski, Vladimir A. Skuratov, Nikolai A. Poklonski, M. I. Tarasik, V. A. Filipenia, Tomasz N. Koltunowicz, Andreas D. Wieck, Vo Quang Nha
Publikováno v:
Acta Physica Polonica A. 123:926-928
with 170 MeV Xenon Ions N.A. Poklonski, N.I. Gorbachuk, Vo Quang Nha, M.I. Tarasik, S.V. Shpakovski, V.A. Filipenia, V.A. Skuratov, A. Wieck and T.N. Koatunowicze,∗ Belarusian State University, 4 Nezavisimosti Ave., BY-220030, Minsk, Belarus JSK In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eb2af87f1d49531ef4153cf3957a31c
https://doi.org/10.12693/aphyspola.123.926
https://doi.org/10.12693/aphyspola.123.926
Autor:
A. A. Patrin, M. I. Tarasik
Publikováno v:
Journal of Applied Spectroscopy. 65:598-603
The spectrum of the coefficient of optical absorption in silicon in the presence of internal (elastic, mechanical) stresses is calculated. Band splitting, including the weight factor of the split subbands, is allowed for. An ordinary equation for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::942b81b017599eb5ff0e4b8702e5f601
https://doi.org/10.1007/bf02675654
https://doi.org/10.1007/bf02675654
Autor:
N.F. Kurilovich, A.V. Mazanik, Anis Saad, L. Survilo, A.M. Yanchenko, A. S. Posed'ko, Yu. Trofimov, M. I. Tarasik, Aleksander K. Fedotov
Publikováno v:
Thin Solid Films. 487:202-204
Effects of irradiation of 1 MeV electrons or 60 Co gamma-quantum and nanostructuring on CdS x Se 1− x solid solution layers, affecting their influence on the fluctuations of the potential relief, were studied in this paper. The films were deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b18d2080362caf0791ee06b00635800
https://doi.org/10.1016/j.tsf.2005.01.065
https://doi.org/10.1016/j.tsf.2005.01.065
Publikováno v:
Journal of Applied Spectroscopy. 61:613-616
The studies performed here have shown that the superlattice samples studied exhibit photoluminescence spectra which agree with the Kronig-Penney model, although in calculating the energies of the radiative transitions it is necessary to take into acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9ed59f91882de78768df631893653fe
https://doi.org/10.1007/bf02606543
https://doi.org/10.1007/bf02606543