Zobrazeno 1 - 8
of 8
pro vyhledávání: '"M. I. Shishkin"'
Publikováno v:
Technical Physics Letters. 46:1000-1003
An increase in the reflection in the IR spectral range typical of a plasmon resonance in single crystals is observed in an InSb film formed by thermal evaporation in a vacuum on a CdS single crystal. Raman spectra demonstrate an approximately constan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f2e5a7114b9bc84ae9918a252c15cc
https://doi.org/10.1134/s1063785020100296
https://doi.org/10.1134/s1063785020100296
Publikováno v:
Semiconductors. 53:1082-1087
Quantum dots of the group of wide-gap and narrow-gap semiconductors are synthesized and investigated under identical conditions, which makes it possible to perform the comparative analysis and modeling of the mechanisms of radiative recombination and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::958697598cebf940a98a3bd517735e49
https://doi.org/10.1134/s1063782619080232
https://doi.org/10.1134/s1063782619080232
Publikováno v:
Technical Physics Letters. 45:370-373
The main laws of electron transport in layers of lead sulfide (PbS) nanoparticles deposited from aqueous ethanol suspensions were determined by analysis of their current–voltage characteristics. Optical spectra measured at wavelengths in the region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7f0fc98bc4b302c33c4113c4fc198a
https://doi.org/10.1134/s106378501904028x
https://doi.org/10.1134/s106378501904028x
Publikováno v:
Semiconductors. 52:986-992
The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)0.9–(PbS)0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::102b4513f43aafeb86dca06cb2618426
https://doi.org/10.1134/s1063782618080171
https://doi.org/10.1134/s1063782618080171
Publikováno v:
Semiconductors. 52:755-759
The structural and electrical properties of PbS nanoparticles (40–70 nm), produced by a chemical reaction of sodium hydroxide with lead nitrate and electrophoretically deposited onto a conductive substrate, are investigated. The composition and str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c926dcf4be0c3603f52b26475de09d20
https://doi.org/10.1134/s1063782618060258
https://doi.org/10.1134/s1063782618060258
Publikováno v:
Technical Physics Letters. 44:309-312
The spectral dependences of transmission, absorption, and reflection in CdS−PbS semiconductor layers, which are promising for the development of photodetectors and emitters in the region of an atmospheric- transparency window, were studied. It has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ad3257eee4a8ae5b8fdf5ff958c735
https://doi.org/10.1134/s1063785018040120
https://doi.org/10.1134/s1063785018040120
Publikováno v:
Technical Physics Letters. 44:362-365
Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9497d06285d2ab62550efa613a958642
https://doi.org/10.1134/s1063785018040284
https://doi.org/10.1134/s1063785018040284
Autor:
D. S. Mosiyash, M. I. Shishkin, A. I. Mihaylov, Ya. E. Pereverzev, N. D. Zhukov, A. A. Hazanov, V. F. Kabanov
Publikováno v:
Semiconductors. 52:78-83
The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af180940f7ba6c3c9f2a6c02c0eb3c0
https://doi.org/10.1134/s1063782618010256
https://doi.org/10.1134/s1063782618010256