Zobrazeno 1 - 10
of 63
pro vyhledávání: '"M. I. Nathan"'
Autor:
M. I. Nathan, P. Paul Ruden, Zhenlin Rang, Zainuriah Hassan, Sha Shiong Ng, M. Z. Kauser, Yi Liu, Y. C. Lee, Fong Kwong Yam
Publikováno v:
physica status solidi c. 3:2287-2290
We report on the effects of hydrostatic pressure on an Alx Ga1–xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Alx Ga1–xN film were carried out using atomic force microsc
Publikováno v:
physica status solidi (b). 242:3182-3188
We investigate the magnetic properties of a strongly n-type GaMnN alloy grown by molecular beam epitaxy. Transport, X-ray diffraction, and magnetic characterizations are presented. The carrier concentration and mobility obtained by Hall effect measur
Publikováno v:
Journal of Superconductivity. 18:69-73
We present magnetometry and charge transport data for a GaMnN film with approximately 7% (atomic) Mn grown by molecular beam epitaxy. Measurements of magnetization vs. applied magnetic field show hysteresis consistent with the existence of ferromagne
Autor:
Andrew M. Wowchak, J. E. Borton, J. M. Van Hove, A. K. Fung, Peter Chow, M. I. Nathan, R. Hickman
Publikováno v:
Journal of Electronic Materials. 28:572-579
We study the electrical characteristics (current vs voltage, I/V) of Co, In, Mg, Mn, Ni, and Zn each with an Au overlayer to determine their usefulness as ohmic contact metals to p-type GaN. For all the metals, none of the I/V relationships are compl
Publikováno v:
Journal of Applied Physics. 84:3741-3746
Transmission line method patterns were fabricated on AlGaAs/GaAs heterostructures to measure the effect of uniaxial stress on the heterojunction two-dimensional electron gas resistivity and the contact resistance. Uniaxial compressive stress was appl
Publikováno v:
Journal of Applied Physics. 81:70-73
We present a one-dimensional simulation methodology for determining the liquid crystal director distribution in a cell for arbitrary pretilt angles on two glass substrate surfaces. The method is illustrated for cases of an asymmetric twisted nematic
Publikováno v:
Journal of Applied Physics. 81:502-505
The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [110] directions on MODFETs that were grown on a (001) substrate pr
Publikováno v:
Journal of Applied Physics. 79:7770-7774
We show experimentally that current–voltage characteristics of double‐barrier resonant tunneling devices (DBRTDs) can be modified by internal polarization fields due to the piezoelectric effect induced by external uniaxial stresses. Electric pola
Publikováno v:
Journal of Applied Physics. 79:7763-7769
Calculations of the effects of external stress on the current–voltage characteristics of double‐barrier (001)‐ and (111)‐oriented resonant tunneling devices are presented. Crystal strains arising from the application of external pressure and,
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:924-927
We demonstrate that high quality (111)B oriented heterostructures can be grown in a gas source molecular beam epitaxy system if unity III/V flux ratio, proper substrate temperature, and misoriented substrates are used. We also show piezoelectric modi