Zobrazeno 1 - 10
of 52
pro vyhledávání: '"M. I. Ilashchuk"'
Autor:
I. G. Orletskyi, M. I. Ilashchuk, I. P. Koziarskyi, M. M. Solovan, D. P. Koziarskyi, E. V. Maistruk, O. A. Parfenyuk
Publikováno v:
Springer Proceedings in Physics ISBN: 9783031180958
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69e8f58d019e83c8fe0f8fb54af18ef7
https://doi.org/10.1007/978-3-031-18096-5_32
https://doi.org/10.1007/978-3-031-18096-5_32
Publikováno v:
2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
The conditions for the production of isotype FTO/n-CdTe heterojunctions by spray pyrolysis of SnO 2 :F (FTO) thin films on n-CdTe crystalline substrates have been studied. The mechanisms of electron motion through the energy barrier of the heterojunc
Autor:
I G Orletskyi, M I Ilashchuk, M M Solovan, E V Maistruk, I P Koziarskyi, D P Koziarskyi, A I Mostovyi, K S Ulyanytskiy
Publikováno v:
Semiconductor Science and Technology. 37:065027
Photosensitive Schottky diodes of graphite/n-Cd1−x Zn x Te were obtained by depositing thin films of graphitized carbon on crystalline substrates of n-Cd1−x Zn x Te solid solution by electron beam evaporation. Based on the analysis of the single-
Autor:
S. V. Nichyi, O. A. Parfenyuk, M. N. Solovan, I G Orletskyi, Pavlo D. Maryanchuk, Eduard V. Maistruk, M. I. Ilashchuk
Publikováno v:
Semiconductors. 52:1171-1177
The conditions for fabricating n-FeS2/p-Cd1 –xZnxTe heterojunctions by the spray pyrolysis of thin pyrite films on p-Cd1 –xZnxTe crystalline substrates are investigated. A comprehensive analysis of the current–voltage (I–V) and capacitance–
Autor:
Eduard V. Maistruk, H. P. Parkhomenko, M. I. Ilashchuk, S. V. Nichyi, I G Orletskyi, I. P. Koziarskyi, D. P. Koziarskyi, P. D. Marianchuk
Publikováno v:
Optik. 241:167246
The study of electric and photoelectric properties of anisotypic ZnO:Al/n-CdS/p-Cd1−xZnxTe heterojunctions made on unannealed and annealed substrates at high temperature (T = 1200 K) under conditions of minimum cadmium vapor pressure. Sequential ap
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:276-279
In this work, we study the electrical properties of contacts to p-CdTe, formed by different methods. Two types of symmetric structures (Cu–Au/p +/p-CdTe/p +/Au–Cu and Mo–MoO x /p +/p-CdTe/p +/MoO x –Mo) with p + regions, obtained by different
Autor:
Pavlo D. Maryanchuk, Eduard V. Maistruk, Giancarlo Cicero, I G Orletskyi, Viktor V. Brus, Elena Maria Tresso, T.I. Boichuk, Federico Pinna, Mykhailo M. Solovan, M. I. Ilashchuk
Publikováno v:
Journal of Physics and Chemistry of Solids. 100:154-160
This paper reports a complex analysis of structural, optical and electrical properties of Cu2ZnSnS4 (CZTS) films, prepared by spin-coating of a sol-gel based on the low-cost and environmentally friendly solvent dimethyl sulfoxide (DMSO) and synthesiz
Autor:
H. P. Parkhomenko, Eduard V. Maistruk, I. P. Koziarskyi, M. I. Ilashchuk, I. G. Orletsky, D. P. Koziarskyi, P. D. Marianchuk
Publikováno v:
Materials Research Express. 8:015905
The conditions for obtaining diode heterostructures of MnS/n-CdZnTe by the method of spray pyrolysis of MnS alabandite thin films on n-CdZnTe crystalline substrates were investigated. Based on the analysis of the temperature dependences of the I-V-ch
Autor:
I G Orletskyi, Viktor V. Brus, G O Andrushchak, I.S. Babichuk, G P Parkhomenko, M. M. Solovan, A. I. Mostovyi, M. I. Ilashchuk, Nora Schopp, Pavlo D. Maryanchuk
Publikováno v:
Nanotechnology. 32:109601
Autor:
Zakhar D. Kovalyuk, Viktor V. Brus, M. I. Ilashchuk, M. M. Solovan, I. G. Orletsky, P. D. Marianchuk
Publikováno v:
Semiconductors. 50:334-338
The conditions for fabricating photosensitive TiN/p-InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly cleaved p-InSe single-crystal substrates is investigated. The presence of a tunnel-transparent h