Zobrazeno 1 - 10
of 16
pro vyhledávání: '"M. I. Idris"'
Autor:
S. S. N. A. Bakil, M. I. Idris, W. A. M. A. Zakhi, M. A. Selimin, L. T. Chuan, H. Z. Abdullah
Publikováno v:
PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON FRONTIER OF DIGITAL TECHNOLOGY TOWARDS A SUSTAINABLE SOCIETY.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bd945ecd5399414f668fb95d221c859
https://doi.org/10.1063/5.0120958
https://doi.org/10.1063/5.0120958
Publikováno v:
FUDMA JOURNAL OF SCIENCES. 4:132-141
The Schiff base (PDB) was synthesized by refluxing ethanolic solution of 5,6-diamino-1,10-phenanthroline with Benzene-1,4-dicarbaldehyde for 3 hours. Similarly the complexes were synthesized by refluxing equimolar solution of PDB with [Ni(phen)2Cl2]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dbf87a4568d6b1707b634df1e237946
https://doi.org/10.33003/fjs-2020-0403-354
https://doi.org/10.33003/fjs-2020-0403-354
Publikováno v:
Cybernetics and Information Technologies. 20:64-74
Recent Activity Daily Living (ADL) not only tackles simple activities, but also caters to a wide range of complex activities. Although the same activity has been carried out under the same environmental conditions, the acceleration signal obtained fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0689e7e9ea6c94d0bab67dc133d5d665
https://doi.org/10.2478/cait-2020-0028
https://doi.org/10.2478/cait-2020-0028
Publikováno v:
Journal of Physics: Conference Series. 2411:012011
The precipitation-spin coating technique is employed to prepare nanostructure ZnO quantum dot (QD) films at different thicknesses. The X-ray diffraction analysis reveals the polycrystalline thin film growth along (101) plane and crystallinity improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35531a7b6802d2575e413fa4ea46b4a6
https://doi.org/10.1088/1742-6596/2411/1/012011
https://doi.org/10.1088/1742-6596/2411/1/012011
Publikováno v:
International Journal of Engineering and Advanced Technology. 9:2779-2788
The nervous system is a complex yet efficient structure – with superior information processing capabilities that surely surpass any man-made high-performance computer. However, without having a complete architectural blueprint of this “technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13e9766d724fd01c3ac254dbe01e7cf4
https://doi.org/10.35940/ijeat.a1246.109119
https://doi.org/10.35940/ijeat.a1246.109119
Publikováno v:
International Journal of Recent Technology and Engineering (IJRTE). 8:5422-5427
Recently, Human Activity Recognition (HAR) has gained meaningful information for a human being. A wearable sensor like an accelerometer, small and simple to perform, has opened the room for scientists to explore an initial understanding of ubiquitous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68bf2dfada4f73c3eb46a8a89f0deaaf
https://doi.org/10.35940/ijrte.b2381.098319
https://doi.org/10.35940/ijrte.b2381.098319
Publikováno v:
International Journal of Recent Technology and Engineering (IJRTE). 8:5505-5508
Interface states of MOS structures capacitors incorporated with low levels of phosphorous have been investigated by conductance and C-ψs method. The frequency response of interface states was observed by the conductance method up to 10 MHz. The corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1678f768da699d7ae18ff2a5bb8a0a
https://doi.org/10.35940/ijrte.c5316.098319
https://doi.org/10.35940/ijrte.c5316.098319
Autor:
A. B. Horsfall, M. I. Idris
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
An increased in drain current and improved of subthreshold slope have been demonstrated in enhancement mode 4H-SiC FinFET using Al 2 O 3 dielectric. The fabricated devices utilised top and sidewall surface of the 3-Dimensional structure formed by RIE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e17bf5fca6e1ea1fc83b1eea51bf3b
https://doi.org/10.1109/edtm47692.2020.9118016
https://doi.org/10.1109/edtm47692.2020.9118016
Autor:
N. Y. M. Yasin, Mohd Azlishah Othman, S. N. Taib, F. Arith, N. Makhtar, M. I. Idris, Z. A. F. M. Napiah
Publikováno v:
AIP Conference Proceedings.
The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52184e4ddb4de68439d5571a8c4b8cc
https://doi.org/10.1063/1.4866752
https://doi.org/10.1063/1.4866752
Publikováno v:
Journal of Physics D: Applied Physics; 12/11/2019, Vol. 52 Issue 50, p1-1, 1p