Zobrazeno 1 - 10
of 24
pro vyhledávání: '"M. I. Gorlov"'
Publikováno v:
История: факты и символы, Vol 0, Iss 1, Pp 54-60 (2022)
In order to determine the specifics of the interpretation of the policy of "counter-reform" of the government of Alexander III in modern textbooks of national history for higher educational institutions, the authors carried out a comparative analysis
Externí odkaz:
https://doaj.org/article/d5e996a0d0ad48abb4db96b30616b6cd
Autor:
M. I. Gorlov, Yu. I. Mezentseva
Publikováno v:
Bulletin of the Moscow State Regional University (History and Political Science). :115-120
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f7abfb28f460b0c43c1d667f336bf21
https://doi.org/10.18384/2310-676x-2022-2-115-120
https://doi.org/10.18384/2310-676x-2022-2-115-120
Publikováno v:
Russian Journal of Nondestructive Testing. 49:278-282
We consider the sensitivity of electrical parameters and low-frequency noise of digital integral schemes that are made using different technologies to X-ray radiation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ab1f7afedc9f3b2a01cf3c6c885fbf
https://doi.org/10.1134/s1061830913050033
https://doi.org/10.1134/s1061830913050033
Publikováno v:
Russian Microelectronics. 40:533-537
The sensitivity of various parameters of integrated circuits developed by various technologies to X-ray radiation and the possibility to predict the level of low-frequency noise are considered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c77bf555f619f935abf10f81f699d434
https://doi.org/10.1134/s1063739711070080
https://doi.org/10.1134/s1063739711070080
Publikováno v:
Russian Microelectronics. 40:47-51
Methods of the separation of semiconductor devices (SDs) by reliability with the use of parameters of low-frequency (LF) noise under the effect of X-ray irradiation are considered. Different methods of the separation of SDs by reliability depending o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3ec66c1eed47c75f32d60017a710e4
https://doi.org/10.1134/s1063739710061010
https://doi.org/10.1134/s1063739710061010
Publikováno v:
Russian Microelectronics. 39:19-25
Procedures for screening batches of CMOS and bipolar integrated circuits (ICs) are considered using low-frequency noises and electrostatic discharge (ESD) effects.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310f87b17ad1a50431b15675d11f13a7
https://doi.org/10.1134/s1063739710010038
https://doi.org/10.1134/s1063739710010038
Publikováno v:
Semiconductors. 43:1737-1741
Various methods for separating an integrated circuit (IC) batch were considered using noise parameters for the purpose of determining their reliability. The existing methods for screening semiconductor products using low-frequency (LF) noise were tes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f064f5c10d409bc40831d7af3333a96
https://doi.org/10.1134/s1063782609130260
https://doi.org/10.1134/s1063782609130260
Autor:
M. I. Gorlov, A. V. Strogonov
Publikováno v:
Russian Microelectronics. 36:261-270
ARIMA models are employed to predict the time to degradation failure from life-test data on high-reliability TTL ICs. The circuits investigated are the 134LB1, 106LB1, 133LR3, and 11LA8. The test lengths are 110 000–150 000 h. The interval forecast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce3fe61131009119db63471954ca5ca
https://doi.org/10.1134/s1063739707040063
https://doi.org/10.1134/s1063739707040063
Publikováno v:
Measurement Techniques. 49:1241-1245
Methods of measuring the fundamental parameters of the low-frequency noise of semiconductor devices are considered and versions of instruments for monitoring the noise characteristics of microcircuits, discrete transistors and other semiconductor dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44323d2d25d55c0d368ba1c368c89c22
https://doi.org/10.1007/s11018-006-0267-5
https://doi.org/10.1007/s11018-006-0267-5
Publikováno v:
Russian Microelectronics. 35:337-344
In silicon bipolar junction transistors, electrostatic discharge (ESD) is known to accelerate the degradation of the current gain factor β, which follows a pattern similar to that caused by thermal stress or ionizing irradiation. We use autoregressi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959259449f89ead703728c862bbde4ae
https://doi.org/10.1134/s106373970605009x
https://doi.org/10.1134/s106373970605009x