Zobrazeno 1 - 1
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pro vyhledávání: '"M. I. Etinberg"'
Autor:
A P Shcurko, G. A. Fokin, A Yu Ostrovsky, V. P. Chaly, Yu.V. Pogorelsky, A. L. Ter-Martirosyan, V.E. Myachin, S. Yu. Karpov, M. I. Etinberg, I. Yu. Rusanovich, A Sokolov, N A Strugov
Publikováno v:
Semiconductor Science and Technology. 9:345-348
The influence of the growth temperature of ternary compounds on the degradation rate of AlGaAs/GaAs laser diodes was studied. The optimal temperature was found to be 700 degrees C. A further reduction in the degradation rate may be achieved by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b46aa2963acbd0b2f5f137a20a0cb98
https://doi.org/10.1088/0268-1242/9/4/002
https://doi.org/10.1088/0268-1242/9/4/002
