Zobrazeno 1 - 10
of 10
pro vyhledávání: '"M. Hussein Mourad"'
Publikováno v:
Key Engineering Materials. 835:374-383
This work deals with the deposited cadmium sulfide (CdS) quantum dots thin films on transparent conductive fluorine-doped tin oxide (FTO) substrates prepared by successive ionic layer adsorption and reaction technique (SILAR). QD deposition based on
Publikováno v:
Chinese Journal of Physics. 59:83-91
Thin films of InP was grown on single crystalline substrates of Si to form InP/Si heterojunctions by liquid phase epitaxy (LPE) and its morphology and crystalline characteristics were achieved. The essential electrical properties and its main paramet
Publikováno v:
Optics & Laser Technology. 101:208-215
Solar based cells coated by nanoparticles (NPs) acknowledge potential utilizing as a part of photovoltaic innovation. The acquired silicon solar cells (Si-SCs) coated with different sizes of silver nanoparticles (Ag NPs) as well as uncoated were fabr
Publikováno v:
Egyptian Journal of Chemistry.
Quantum dots are very tiny semiconductor particles used in solar cells; their optical and electronic properties differ from those of macro particles. They could improve the performance of solar cells if they are prepared in the suitable size. In this
Autor:
C. W. Chin, Lee Siang Chuah, Zainuriah Hassan, M. Hussein Mourad, Sha Shiong Ng, Fong Kwong Yam
Publikováno v:
Composite Interfaces. 18:37-47
GaN growth on Si(111) substrate typically routes to the initial high dislocation density and cracks because of the large discrepancy of lattice constant and thermal expansion coefficient between GaN and Si. This article reports the use of plasma-assi
Publikováno v:
Surface Review and Letters. 15:699-703
PN photodiodes, as an alternative form of photodetectors, is based on carrier production in the high-field junction region, and it has a response time considerably faster than that of a photoconductor and is typically in the order of nanoseconds. Pho
Publikováno v:
Surface Review and Letters. 15(05):699-703
PN photodiodes, as an alternative form of photodetectors, is based on carrier production in the high-field junction region, and it has a response time considerably faster than that of a photoconductor and is typically in the order of nanoseconds. Pho
Publikováno v:
IEE Proceedings. Optolectronics
IEE Proceedings. Optolectronics, 2000, 147, pp.37-42
IEE Proceedings. Optolectronics, 2000, 147, pp.37-42
A dual mode laser source is proposed. It is based on a sampled grating DFB laser constituted with alternating DFB and FP sections. The basic principles of this device are presented, and its behaviour is studied through modelling. It is shown that mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc2ac9fa25261eb342520fe578bbbc91
https://hal.archives-ouvertes.fr/hal-00158552
https://hal.archives-ouvertes.fr/hal-00158552
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