Zobrazeno 1 - 10
of 74
pro vyhledávání: '"M. Hohenstein"'
Autor:
Robert G. Bociek, Julie M. Vose, Susan Blumel, P. J. Bierman, Matthew A. Lunning, Peggy Heires, M. Hohenstein, James O. Armitage, L. Lyden
Publikováno v:
Hematological Oncology. 37:519-519
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::071f2d11c1e22697855f121601b8a808
https://doi.org/10.1002/hon.204_2631
https://doi.org/10.1002/hon.204_2631
Publikováno v:
Materials Science and Technology. 14:1279-1282
A structural and optical study of GaInAs/GaAs heterostructures grown by molecular beam epitaxy on {100}, {311}, and {211} oriented GaAs substrates is reported. The structural analysis by X-ray diffraction reveals the presence of shear strain in the {
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfa2fd677e7f3491f219fcc168d608b4
https://doi.org/10.1179/mst.1998.14.12.1279
https://doi.org/10.1179/mst.1998.14.12.1279
Autor:
Karl Eberl, A. Lehmann, A. Kurtenbach, M. Dilger, P. Grambow, D. Heitmann, Fritz Phillipp, M. Hohenstein, K. von Klitzing
Publikováno v:
Semiconductor Science and Technology. 9:2258-2262
The structure of GaAs quantum wires embedded in Al0.33Ga0.67As and the interfaces between the wires and the matrix were investigated by transmission electron microscopy (TEM) in diffraction-contrast and high-resolution (HREM) modes. The quantum wires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e234702856061820d5284eeae65d3b0
https://doi.org/10.1088/0268-1242/9/12/016
https://doi.org/10.1088/0268-1242/9/12/016
Autor:
R. Bierwolf, M. Hohenstein
Publikováno v:
Ultramicroscopy. 56:32-45
A method is presented which allows us to quantity the information contained in high-resolution electron micrographs by the measurement of the intensity of reflections in diffractograms. Due to transfer gaps of the contrast transfer function and in or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a58df62d1582f2df97004fa35f1a3c
https://doi.org/10.1016/0304-3991(94)90144-9
https://doi.org/10.1016/0304-3991(94)90144-9
Autor:
Karl Eberl, M. Dilger, P. Grambow, M. Hohenstein, A. Lehmann, A. Kurtenbach, Klaus von Klitzing, D. Heitmann
Publikováno v:
Solid-State Electronics. 37:535-538
We studied the preparation of low dimensional structures by molecular beam epitaxy (MBE)-regrowth on patterned AlGaAs buffer layers. The detailed interface and surface structure was investigated by scanning electron microscopy and transmission electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::195acc7f998bc26c3ece9dd917dda4aa
https://doi.org/10.1016/0038-1101(94)90240-2
https://doi.org/10.1016/0038-1101(94)90240-2
Publikováno v:
Journal of Applied Physics. 74:7188-7197
We demonstrate a new route to the synthesis of InAs monolayer structures in GaAs by bridging the fundamental gap between the requirement of the lowest possible substrate temperatures to suppress In segregation and the necessity to maintain sufficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::314d427d2e3f72461efd0139fa245281
https://doi.org/10.1063/1.355036
https://doi.org/10.1063/1.355036
Publikováno v:
Journal of Applied Physics. 74:431-435
The direct formation of mesoscopic surface corrugations on high‐index GaAs substrates during growth by molecular‐beam epitaxy is reported. The accumulation of microscopic steps on GaAs (210) to produce one‐dimensional step arrays with a 230 A l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36404ea79187c9ee6e9ed84a62e37dc1
https://doi.org/10.1063/1.354128
https://doi.org/10.1063/1.354128
Publikováno v:
Ultramicroscopy. 49:273-285
We present a method which allows the direct measurement of local displacements within a crystal lattice by high-resolution electron microscopy (HREM). The basic idea of this method is the formation of moire structures when two two-dimensional lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5682e86f8745744c60a7ec160697d760
https://doi.org/10.1016/0304-3991(93)90234-o
https://doi.org/10.1016/0304-3991(93)90234-o
Publikováno v:
Journal of Crystal Growth. 127:765-769
We study the solid-source MBE growth of InAs films embedded in Al 0.48 In 0.52 As lattice matched to InP. Under As-stable conditions, the high strain of the InAs film induces a morphological phase transition from layer-by-layer to island nucleation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7153a80820ae7df9db74771c3a23bef0
https://doi.org/10.1016/0022-0248(93)90728-f
https://doi.org/10.1016/0022-0248(93)90728-f
Publikováno v:
Applied Physics A Solids and Surfaces. 56:91-94
We show that surface stoichiometry and growth mode are intimately related for heteroepitaxy of InAs on GaO0.47In0.53As. Under As-stable conditions during molecular beam epitaxy, the high strain of the InAs film induces a morphological phase-transitio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e60f0a606056f91c655df9d064d8ec75
https://doi.org/10.1007/bf00351909
https://doi.org/10.1007/bf00351909