Zobrazeno 1 - 10
of 42
pro vyhledávání: '"M. Hockly"'
Publikováno v:
Philosophical Magazine A. 68:121-136
The large-angle convergent-beam electron diffraction (LACBED) technique has been used to measure layer thicknesses and strain of ultra-thin arsenic and phosphorus-rich layers produced by temporary arsine and phosphine purges in the metal-organic vapo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6722c80884d1581a6b1baa752710a578
https://doi.org/10.1080/01418619308219361
https://doi.org/10.1080/01418619308219361
Publikováno v:
Journal of Applied Physics. 70:182-192
The thermal interdiffusion behavior of intrinsic nominally lattice‐matched GaInAs/AlInAs heterostructures grown by molecular‐beam epitaxy, studied using electron microscopy, is reported. At temperatures as low as 700 °C, significant degrees of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::842513fd7c3300deff340fa894d543b7
https://doi.org/10.1063/1.350376
https://doi.org/10.1063/1.350376
Publikováno v:
Thin Solid Films. 184:221-227
Silicon molecular beam epitaxy (MBE) on Si(001) substrates patterned with oxide has been studied. The transition between polycrystalline silicon deposition on the oxide and in situ etching of the oxide was compared, using a thermodynamic model. Islan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02940da3a12a6872bd054c653eb4e08a
https://doi.org/10.1016/0040-6090(90)90416-b
https://doi.org/10.1016/0040-6090(90)90416-b
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6350e669400e5cc51c2d6e1b5a238080
https://doi.org/10.1109/movpe.1992.665035
https://doi.org/10.1109/movpe.1992.665035
Conference
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Publikováno v:
Applied Physics Letters. 56:140-142
Misfit dislocations oriented in a specific 〈110〉 direction have been produced in strained Si1−xGex epitaxial layers deposited on Si(001), using sites of localized crystallographic damage as dislocation sources. During a high‐temperature annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::955998da93f8f7481da110f398dbb08d
https://doi.org/10.1063/1.103054
https://doi.org/10.1063/1.103054
Publikováno v:
Applied Physics Letters. 56:54-56
The density of misfit dislocation sources in strained Si1−xGex layers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ab9400a9907c30c4b0ce3f5fa1ea8a
https://doi.org/10.1063/1.102645
https://doi.org/10.1063/1.102645
Publikováno v:
MRS Proceedings. 220
A series of relaxed Si1−xGex alloy layers with germanium contents up to 70% has been deposited on silicon. Although direct deposition ot these highly mismatched layers on silicon gave dislocation densities of 109-1010cm2 and poor morphology, it was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bdff96a4fa32481a598a5c660fd6b37
https://doi.org/10.1557/proc-220-187
https://doi.org/10.1557/proc-220-187
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:680-681
The sharpness of interface, and the uniformity of well width, is of great interest in the growth of single quantum well (SQW) structures. These properties are usually investigated using High resolution electron microscopy (HREM) on cross sectioned sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52375433b83845315bd9e964a6c66de4
https://doi.org/10.1017/s0424820100176538
https://doi.org/10.1017/s0424820100176538
Autor:
M. Hockly, E.A.D. White
Publikováno v:
Journal of Crystal Growth. 68:334-339
In MOVPE growth of epilayers of the ternary composition Ga0.47In0.53As, nominally lattice matched to InP substrates, a complete change in the occupancy of the group V sublattice is involved. At the commencement of growth, the low concentration of PH3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33b951537eeee97f243d0e4211fb02ce
https://doi.org/10.1016/0022-0248(84)90434-2
https://doi.org/10.1016/0022-0248(84)90434-2