Zobrazeno 1 - 10
of 22
pro vyhledávání: '"M. Hierlemann"'
Publikováno v:
Physica B: Condensed Matter. :13-17
Process-induced defects are still a key issue in semiconductor device production. The increasing miniaturization and number of process steps as well as the introduction of new materials and processes make the understanding of defect generation more c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdccbdf882aeefab970709b899a6d859
https://doi.org/10.1016/s0921-4526(01)00652-4
https://doi.org/10.1016/s0921-4526(01)00652-4
Autor:
C. Werner, M. Hierlemann
Publikováno v:
Materials Science in Semiconductor Processing. 3:31-39
Modeling of chemical vapor deposition (CVD) processes requires knowledge of the gas-flow dynamics and chemical reactions occurring in the reactor. In order to go beyond simple growth rate predictions based on lumped kinetics from incomplete experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86ea3207b0e2ba8d162b23b53f91498
https://doi.org/10.1016/s1369-8001(00)00007-x
https://doi.org/10.1016/s1369-8001(00)00007-x
Publikováno v:
Journal of The Electrochemical Society. 143:2646-2654
Gas-phase reaction pathways for GeH 4 decomposition are the relevant reaction rates are evaluated by transition-state theory with mo ecular structures and thermochemical data predicted by ab initio molecular orbital calculations, specifically Hartree
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd1e697d6675eb24b4f6253c1c8fcea
https://doi.org/10.1149/1.1837063
https://doi.org/10.1149/1.1837063
A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor
Publikováno v:
Journal of The Electrochemical Society. 142:259-266
Silicon epitaxial growth with SiH[sub 2]Cl[sub 2] (DCS) is modeled within a realistic thermal-fluid environment using a detailed reaction mechanism. The proposed reaction mechanism includes both gas-phase and surface reactions. It accounts for surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff279f7b51b034fd782776ddde4e0577
https://doi.org/10.1149/1.2043894
https://doi.org/10.1149/1.2043894
Autor:
Z. Luo, N. Rovedo, S. Ong, B. Phoong, M. Eller, H. Utomo, C. Ryou, H. Wang, R. Stierstorfer, L. Clevenger, S. Kim, J. Toomey, D. Sciacca, J. Li, W. Wille, L. Zhao, L. Teo, T. Dyer, S. Fang, J. Yan, O. Kwon, D. Park, J. Holt, J. Han, V. Chan, J. Yuan, T. Kebede, H. Lee, S. Lee, A. Vayshenker, Z. Yang, C. Tian, H. Ng, H. Shang, M. Hierlemann, J. Ku, J. Sudijono, M. Ieong
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
An aggressively scaled high performance 45 nm bulk CMOS technology targeting graphic, gaming, wireless and digital home applications is presented. Through innovative utilization and integration of advanced stressors, thermal processes and other techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1610fb3143a3ce07d04371fbf9214a69
https://doi.org/10.1109/vlsit.2007.4339709
https://doi.org/10.1109/vlsit.2007.4339709
Autor:
M. Ieong, J. Sudijono, J.H. Ku, D. Shum, M. Hierlemann, R. Amos, G. Chiulli, R. Lindsay, S.D. Kim, R. Loesing, L. Burns, A. Turansky, A. Madan, B. St Lawrence, R. Davis, R. Murphy, J. Li, J.J. Kim, H. Zhuang, S. Mishra, D. Schepis, A. Gutmann, J. Kempisty, T.N. Adam, J. Holt, H. Ng, S. Fang, Y.F. Chong, R. Stierstorfer, R. Krishnasamy, Z. Luo, N. Rovedo, L.W. Teo, H. Utomo, J.P. Han
Publikováno v:
2006 International Electron Devices Meeting.
We present an advanced CMOS integration scheme based on embedded SiGe (eSiGe) with a novel graded germanium process. The retention of channel strain enabled a pFET performance gain of 15% over a non-graded eSiGe control. When combined with a compress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f69c8ec8089702df2e409185a015c70
https://doi.org/10.1109/iedm.2006.346958
https://doi.org/10.1109/iedm.2006.346958
Autor:
T.F. Kuech, M. Hierlemann
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b0639883a5ab3261ecfb87d0edecf1
https://doi.org/10.1109/movpe.1992.664967
https://doi.org/10.1109/movpe.1992.664967
Publikováno v:
Springer Proceedings in Physics ISBN: 9783540319146
Large angle convergent beam electron diffraction (LACBED) patterns recorded of trenches in silicon devices were compared with simulated LACBED patterns to determine the strain in the structure. Displacement fields stemming from stress simulations of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ea0f71c3c498d0e50e5cce100b32e6
https://doi.org/10.1007/3-540-31915-8_93
https://doi.org/10.1007/3-540-31915-8_93
Publikováno v:
Advances in Rapid Thermal and Integrated Processing ISBN: 9789048146963
Chemical vapor deposition (CVD) performed in rapid thermal processing (RTP) chambers, also referred to as rapid thermal chemical vapor deposition (RTCVD), has been demonstrated for a wide range of typical microelectronics manufacturing processes [1],
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67d8403edc8b1fab20ff8fb20fcdfb6a
https://doi.org/10.1007/978-94-015-8711-2_11
https://doi.org/10.1007/978-94-015-8711-2_11
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1995, 05 (C5), pp.C5-71-C5-77. ⟨10.1051/jphyscol:1995505⟩
Journal de Physique IV Proceedings, EDP Sciences, 1995, 05 (C5), pp.C5-71-C5-77. ⟨10.1051/jphyscol:1995505⟩
Very limited experimental data are available on thermal decomposition of germane in the gas phase. Recent developments in the theoretical quantum chemistry techniques such as ab initio Hartree-Fock and density functional methods have made accurate de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0885ccb44456f81405fc8140b074310
https://hal.archives-ouvertes.fr/jpa-00253761/file/ajp-jp4199505C505.pdf
https://hal.archives-ouvertes.fr/jpa-00253761/file/ajp-jp4199505C505.pdf